Press Releases from GeneSiC Semiconductor (10 total)
5th Generatoin 650V MOSFET MPS™ Diodes for Best-in-Class Efficiency
GeneSiC announces availability of revolutionary 650V SiC Schottky MPS™ diodes featuring low built-in voltage to harness unprecedented efficiency levels
https://www.genesicsemi.com/press-release-gen5-650V-sic-schotty-mps/
DULLES, VA / May 28, 2021 --…
GeneSiC’s Industry Leading 6.5kV SiC MOSFETs - the Vanguard for a New Wave of …
Dulles, VA
October 20, 2020
https://www.genesicsemi.com/press-release-6-5kv-sic-mosfet/
GeneSiC releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power…
Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT …
Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level…
GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors
SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits
Dulles, Virginia., Oct 28, 2014 -- GeneSiC…
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints
High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities
Dulles, Virginia.,…
GeneSiC introduces Silicon Carbide Junction Transistors
Industry’s Most Compelling SiC Switch Solution for High Frequency and High Temperature Applications
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of…
GeneSiC Semiconductor Selected to Showcase Technology at 2011ARPA-E Energy Innov …
Dulles, VA – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the…
GeneSiC wins power management project from NASA in support of future Venus explo …
GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its…
Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researche …
In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power…
GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor …
DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement the GeneSiC Semiconductor-led team towards the…
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