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Press Releases from GeneSiC Semiconductor (8 total)

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT …

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry’s lowest loss switches – the

GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct 28, 2014 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virginia., Nov 19, 2013 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of Industry-standard SMB (JEDEC DO-214AA) packaged SiC Rectifiers in the 650 – 3300 V range.

GeneSiC introduces Silicon Carbide Junction Transistors

Industry’s Most Compelling SiC Switch Solution for High Frequency and High Temperature Applications GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices

GeneSiC Semiconductor Selected to Showcase Technology at 2011ARPA-E Energy Innov …

Dulles, VA – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of Energy’s Advanced Research Projects Agency – Energy (ARPA-E) and the Clean Technology and Sustainable Industries Organization (CTSI). Hundreds of top technologists and cutting-edge clean tech organizations competed to participate in the Showcase, a hallway of America’s most promising prospects for winning the future

GeneSiC wins power management project from NASA in support of future Venus explo …

GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC

Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researche …

In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (SiC) power devices were not openly available

GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor …

DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid. “This highly competitive award to GeneSiC will allow us to extend our technical