openPR Logo
Press release

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released

11-21-2014 06:53 PM CET | Energy & Environment

Press release from: GeneSiC Semiconductor

The GA03IDDJT30-FR4 can be used to drive GeneSiC's SJTs

The GA03IDDJT30-FR4 can be used to drive GeneSiC's SJTs

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation

GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry’s lowest loss switches – the SiC Junction Transistor (SJT) – with a fully-qualified LTSPICE IV model. Using the new Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15 nanosecond, temperature independent switching characteristics of SiC Junction Transistors, with low driver power losses. Incorporating the new SPICE models, circuit designers can easily evaluate the benefits GeneSiC’s SJTs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC Junction Transistors have significantly different characteristics than other SiC Transistor technologies, as well as Silicon Transistors. Gate Driver boards that can provide low power losses while still offering high switching speeds were needed to provide drive solutions for utilizing the benefits of SiC Junction Transistors. GeneSiC’s fully isolated GA03IDDJT30-FR4 Gate driver board takes in 0/12V and a TTL signal to optimally condition the voltage/current waveforms required to provide small rise/fall times, while still minimizing the continuous current requirement for keeping the Normally-OFF SJT conducting during the on-state. The pin configuration and form factors are kept similar to other SiC transistors. GeneSiC has also released Gerber files and BOMs to end-user to enable them to incorporate the benefits of the driver design innovations realized.
SJTs offer well-behaved on-state and switching characteristics, making it easy to create behavior based SPICE models that agree remarkably well with the underlying physics based models as well. Using well-established and understood physics-based models, SPICE parameters were released after extensive testing with device behavior. GeneSiC’s SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 V and 1700 V SiC Junction Transistors released.

GeneSiC’s SJTs are capable of delivering switching frequencies that are more than 15 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC Junction Transistor SPICE model adds to GeneSiC’s comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC’s comprehensive family of SiC Junction Transistors and Rectifiers into the next generation of power systems.

GeneSiC’s Gate Driver Board datasheets and SJT SPICE models can be downloaded from GeneSiC's website

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

GeneSiC Semiconductor Inc.
43670 Trade Center Place
suite 155
Dulles VA 20166

This release was published on openPR.

Permanent link to this press release:

Please set a link in the press area of your homepage to this press release on openPR. openPR disclaims liability for any content contained in this release.

You can edit or delete your press release Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released here

News-ID: 299843 • Views: 14407

More Releases from GeneSiC Semiconductor

5th Generatoin 650V MOSFET MPS™ Diodes for Best-in-Class Efficiency
GeneSiC announces availability of revolutionary 650V SiC Schottky MPS™ diodes featuring low built-in voltage to harness unprecedented efficiency levels DULLES, VA / May 28, 2021 -- GeneSiC Semiconductor, a pioneer and global supplier of Silicon Carbide (SiC) power semiconductor devices, announces the availability of 5th generation (GE*** series) SiC Schottky MPS™ rectifiers that are setting up a new benchmark with their superior price-performance index, industry-leading surge current and avalanche robustness, and
GeneSiC’s Industry Leading 6.5kV SiC MOSFETs - the Vanguard for a New Wave of …
Dulles, VA October 20, 2020 GeneSiC releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure. GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL. Full SiC
GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors
SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct 28, 2014 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints
High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virginia., Nov 19, 2013 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of Industry-standard SMB (JEDEC DO-214AA) packaged SiC Rectifiers in the 650 – 3300 V range.

All 5 Releases

More Releases for SiC

Global SiC Powder Market Analysis (2020-2025)
Global Info Research offers a latest published report on SiC Powder Analysis and Forecast 2020-2025 delivering key insights and providing a competitive advantage to clients through a detailed report. This report focuses on the key global SiC Powder Concentrate players, to define, describe and analyze the value, market share, market competition landscape, SWOT analysis and development plans in next few years. Click to view the full report TOC, figure and tables: Market
SiC-based Monolithic Transistor-Rectifier Power Device
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the availability of 1200V 75mΩ SiC-based monolithic (single chip) Transistor-rectifier power device in an industry standard package that enables extremely low turn-on energy and reverse recovery losses while offering flexible, modular designs in high frequency power converters. Wide band gap materials, such as SiC and GaN are attractive replacements to conventional
Global Silicon Carbide (SIC) Market 2018 - ESD-SIC, Erdos, Elmet
Apex Market Reports, recently published a detailed market research study focused on the “Silicon Carbide (SIC) Market” across the global, regional and country level. The report provides 360° analysis of “Silicon Carbide (SIC) Market” from view of manufacturers, regions, product types and end industries. The research report analyses and provides the historical data along with current performance of the global PP Pipe industry, and estimates the future trend of Silicon
Black SiC Market Global Analysis & Key Factors ESD-SIC bv, ESK-SIC GmbH, Navarro …
The “Black SiC Market” Report offers an inclusive and decision-making overview, including definitions, classifications and its applications. The Black SiC market is anticipated to reflect a positive growth trend in forthcoming years. The essential driving forces behind the growth and popularity of Black SiC market is analyzed detailed in this report. Global Black SiC Industry Report 2018 is a professional and in-depth study on the current state of the Black SiC
SIC Code Matching Services | B2B Marketing Archives
Search for SIC Codes with our Industry SIC Codes List to target desired audience & classify prospects by industry type in the USA, UK, Canada Europe & Australia! For advanced matching rate, search SIC Codes from B2B Marketing Archives as the firm has come up with the updated Industry SIC Codes List . SIC codes are 6 digit codes that are customized to classify industries. Our lists are organized into several
Global SiC Substrates Market 2012- 2022
Summary Based on products type, the report describes major products type share of regional market. Products mentioned as follows: By Size 2 inch/3 inch 4 inch 6 inch Based on region, the report describes major regions market by vendor, products and Application. Regions mentioned as follows: Europe America Asia Based on Application, the report describes major Application share of regional market. Application mentioned as follows: LED Lighting Power Electronics Leading vendors in the market are included based on sales; price, sales regions, products