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Press Releases from GeneSiC Semiconductor Inc. (5 total)

GeneSiC’s New 3rd GenerationSiC MOSFETs Featuring the Industry’s Best Figure …

https://www.genesicsemi.com/press-release-1200v-sic-mosfet/ DULLES, VA / February 12, 2020 -- GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented

GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturizatio …

https://www.genesicsemi.com/press-release-1ohm-3300v-1000v-sic-mosfet-auxiliary-power-supply/ DULLES, VA / December 4, 2020 -- GeneSiC Semiconductor, a pioneer and global supplier of a comprehensive portfolio of Silicon Carbide (SiC) power semiconductors, today

SiC-based Monolithic Transistor-Rectifier Power Device

GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the availability of 1200V 75mΩ SiC-based

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175oC operati …

Low Inductance, higher temperature capability of Co-packaged mini-modules pushes IGBTs into new applications Dulles, Virginia., March 5, 2013 -- GeneSiC Semiconductor, a pioneer and global

GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Sola …

GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored last week with the announcement that it has been awarded

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