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Press Releases from GeneSiC Semiconductor Inc. (5 total)

GeneSiC’s New 3rd GenerationSiC MOSFETs Featuring the Industry’s Best Figure …

https://www.genesicsemi.com/press-release-1200v-sic-mosfet/ DULLES, VA / February 12, 2020 -- GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size. These G3R™ SiC MOSFETs, offered in optimized low-inductance discrete packages (SMD and through hole), are highly optimized

GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturizatio …

https://www.genesicsemi.com/press-release-1ohm-3300v-1000v-sic-mosfet-auxiliary-power-supply/ DULLES, VA / December 4, 2020 -- GeneSiC Semiconductor, a pioneer and global supplier of a comprehensive portfolio of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of next-generation 3300V and 1700V 1000mΩ SiC MOSFETs – G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J. These SiC MOSFETs enable superior performance levels, based on flagship Figures of Merit (FoM) that enhance and simplify power systems across energy storage, renewable energy, industrial motors, general-purpose

SiC-based Monolithic Transistor-Rectifier Power Device

GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the availability of 1200V 75mΩ SiC-based monolithic (single chip) Transistor-rectifier power device in an industry standard package that enables extremely low turn-on energy and reverse recovery losses while offering flexible, modular designs in high frequency power converters. Wide band gap materials, such as SiC and GaN are attractive replacements to conventional

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175oC operati …

Low Inductance, higher temperature capability of Co-packaged mini-modules pushes IGBTs into new applications Dulles, Virginia., March 5, 2013 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product is being

GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Sola …

GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored last week with the announcement that it has been awarded the prestigious 2011 R&D 100 Award. This award recognizes GeneSiC for introducing one of the most significant, newly introduced research and development advances among multiple disciplines during 2010. R&D Magazine recognized GeneSiC’s Ultra-High Voltage SiC Thyristor for its ability to achieve blocking voltages and frequencies

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