GaN Substrate Market Revenue Predicted to Go Up by 2027

Owing to a lot of advantages over all the other traditional substrates, GaN Substrate is one of the most emerging substrates in the industry and holds a high growth potential. High electron mobility, low switching losses, and fewer lattice mismatches are some of the key advantages of the GaN Substrate, which are leading to the world wide adoption of GaN Substrate, mainly in the industries such as optoelectronics and power electronics. Currently, the GaN Substrate holds authority in LEDs possessing a share of nearly 70% of market revenue, while power electronics products are in an evolving stage. Other applications of GaN Substrate also involve inverters (& converters), RF devices, power supply modules and motor drives which are expected to evolve rapidly in the market.

GaN Substrate is a semiconductor material, whose advantages are evident in comparison to the other conventional semiconductor materials such as Silicon, Silicon Carbide, Aluminium, Sapphire, and others. The GaN material is a thin film which is grown on other materials like Sapphire, Silicon, and Silicon Carbide. Out of which, the GaN on sapphire currently holds for most of the share, but SiC is expected to evolve at the fastest rate among others, in the LEDs and Power electronics segment.

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Global Market of GaN substrate: Drivers and Restraint

Wider band gap, high break-down voltage, larger critical electric field, and higher thermal conductivity are some of the key factors leading to a rapid shift of industry manufacturers from silicon technology to GaN substrate. As these properties let the GaN Substrate material to operate at much higher voltages, work at high switching frequencies, and increase their ability to handle higher power density, thereby offering enhanced power efficiency, which are the key requirements of power amplifiers and applications pertaining to optoelectronics, they are the captivating interest in the R&D fields of these industries. GaN Substrate also exceed the limit of their counterpart Si devices in applications like Schottky diodes, FETs, HEMTs and the other advanced transistors and let them operate efficiently at much higher voltage levels.

These are the key factors which result in gaining attraction for GaN Substrate in the market, with the LED applications being the key drivers holding a share of nearly 70% of revenue in the market for the bulk gallium nitride (GaN) market. As these devices help in reducing the conduction and switching losses and offer higher efficiency in electronic systems, gradually they are entering a new segment of applications, namely power amplifiers. These applications of GaN Substrate are in an evolving stage but are anticipated to show substantial growth in the upcoming years.

Presently on small diameter, namely 2 & 4-inch GaN substrate are present. But these are small diameters which lead to wastage of space and edges resulting in lower efficiencies. This may be a reason which may result in the decrease in market growth if large diameter GaN Substrate is not manufactured successfully. Some countries like U.S., Japan, and Korea have started adopting large diameters, but to gain a wider acceptance of GaN Substrate may take years to come. Also, high implementation cost can result in restraining the growth of GaN substrate market.

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Furthermore, the GaN Substrate market contains immense potential but to hold a strong foothold in the market, still need a right push from the industry manufacturers.

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