GaN RF Devices Market: GAN Systems, Infineon Technologies, NXP Semiconductors, Texas Instruments
MarketResearchReports.Biz has recently announced the Latest industry research report on: "Global GaN RF Devices Market" : Industry Size, Share, Research, Reviews, Analysis, Strategies, Demand, Growth, Segmentation, Parameters, Forecasts.This report studies the global GaN RF Devices market status and forecast, categorizes the global GaN RF Devices market size (value & volume) by manufacturers, type, application, and region. This report focuses on the top manufacturers in United States, Europe, China, Japan, South Korea and Taiwan and other regions.
GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.
In terms of geographical regions, North America will be the major revenue contributor to the market throughout the next five years. The increasing applications of GaN RF devices in the defense sector, the large-scale expansion of 4G networks, and the introduction of 5G, will fuel the growth of the market. Moreover, the presence of a number of GaN RF device vendors in North America and the demand for better powered chips in the consumer, defense, and connected devices sectors, will also drive the markets growth prospects in this region.
The global GaN RF Devices market is valued at xx million US$ in 2017 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2018-2025.
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The major manufacturers covered in this report
GAN Systems
Infineon Technologies
NXP Semiconductors
Texas Instruments
Toshiba
Qorvo
Cree
Avago Technologies
Fujitsu Semiconductor
MACOM
Microsemi
Sumitomo Electric Device
ST-Ericsson
United Monolithic Semiconductors (UMS)
WIN Semiconductors
Geographically, this report studies the top producers and consumers, focuses on product capacity, production, value, consumption, market share and growth opportunity in these key regions, covering
United States
EU
China
Japan
South Korea
Taiwan
We can also provide the customized separate regional or country-level reports, for the following regions:
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Singapore
Rest of Asia-Pacific
Europe
Germany
France
UK
Italy
Spain
Russia
Rest of Europe
Central & South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Saudi Arabia
Turkey
Rest of Middle East & Africa
On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into
RF Front-End Equipment
RF Terminal Equipment
On the basis of the end users/applications, this report focuses on the status and outlook for major applications/end users, consumption (sales), market share and growth rate for each application, including
Consumer Electronics
Industrial Use
Aerospace and Defense
Other
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The study objectives of this report are:
To analyze and study the global GaN RF Devices capacity, production, value, consumption, status (2013-2017) and forecast (2018-2025);
Focuses on the key GaN RF Devices manufacturers, to study the capacity, production, value, market share and development plans in future.
Focuses on the global key manufacturers, to define, describe and analyze the market competition landscape, SWOT analysis.
To define, describe and forecast the market by type, application and region.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends and factors driving or inhibiting the market growth.
To analyze the opportunities in the market for stakeholders by identifying the high growth segments.
To strategically analyze each submarket with respect to individual growth trend and their contribution to the market
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
To strategically profile the key players and comprehensively analyze their growth strategies.
In this study, the years considered to estimate the market size of GaN RF Devices are as follows:
History Year: 2013-2017
Base Year: 2017
Estimated Year: 2018
Forecast Year 2018 to 2025
For the data information by region, company, type and application, 2017 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
Key Stakeholders
GaN RF Devices Manufacturers
GaN RF Devices Distributors/Traders/Wholesalers
GaN RF Devices Subcomponent Manufacturers
Industry Association
Downstream Vendors
Available Customizations
With the given market data, QYResearch offers customizations according to the company's specific needs. The following customization options are available for the report:
Regional and country-level analysis of the GaN RF Devices market, by end-use.
Detailed analysis and profiles of additional market players.
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