Silicon Carbide Power Semiconductor Market to Hit US$19.16 Billion by 2035 at 21.2% CAGR as Japan's ROHM-Toshiba-Mitsubishi Realignment Resets Power-Device Competition

TOKYO, Japan, August 25, 2026 - Japan's silicon carbide power semiconductor industry is entering a more difficult phase than a simple capacity-expansion cycle. The competitive question is shifting from who can build SiC capacity to who can manufacture it at scale, qualify it across demanding applications and reduce cost fast enough to withstand aggressive global pricing. DataM Intelligence reports that the global Silicon Carbide Power Semiconductor Market reached US$2.91 billion in 2025 and is projected to reach US$19.16 billion by 2035, growing at a 21.2% CAGR during 2026-2035. For Japan, the timing is especially important as three long-established power-device groups-ROHM, Toshiba Electronic Devices & Storage and Mitsubishi Electric-are now exploring a structural realignment that could reshape the country's position in SiC devices, modules and manufacturing.

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## Recent 2026 Official Developments in Japan's SiC Power Semiconductor Industry

* **March 27 - ROHM, Toshiba and Mitsubishi Electric opened business-integration discussions. Toshiba confirmed an MoU covering Toshiba Electronic Devices & Storage's semiconductor business, ROHM's semiconductor business and Mitsubishi Electric's power-device business. The companies said the objective is to create the business scale and technology foundation needed to compete globally.

* **April 21 - ROHM completed development of its fifth-generation SiC MOSFETs. ROHM says the devices cut on-resistance by 30% at high temperature versus its fourth-generation products, with samples of discrete devices and modules starting in July 2026.

* **May 21 - Toshiba began test sampling a 1200V trench-gate SiC MOSFET for next-generation AI data-center power systems. The device targets high-density power conversion and emerging HVDC architectures, with mass-production preparation planned during fiscal 2026.

* **June 3 - ROHM disclosed a new AI-server application for SiC. Its 750V SiC MOSFET was adopted in a battery-backup unit supporting a ±400V power architecture, showing how AI infrastructure is becoming a commercial SiC demand pool outside vehicle traction.

* **June 4 - Mitsubishi Electric advanced its fifth-generation SiC roadmap. The company began shipping samples of new trench SiC-MOSFET bare dies for xEV inverters and eAxles, reporting on-resistance 25% below its existing products.

## Japan's SiC Strategy Is Moving from Expansion to Scale Economics

The March integration discussion is more than an M&A headline. Japan's power-device industry is responding to a cost structure that is becoming harder to defend through technology leadership alone. METI's semiconductor supply-security framework explicitly identifies SiC power semiconductors as a strategic area and sets large-scale domestic investment and advanced production equipment among the criteria for strengthening supply resilience. METI has already backed a ROHM-Toshiba power-semiconductor supply plan with support of up to ¥129.4 billion.

At the same time, wafer economics are changing. Mitsubishi Electric completed a new facility in Kumamoto for 200mm SiC wafers and is ramping up the production line, while ROHM says mass-production shipments of its fifth-generation 8-inch SiC MOSFETs have begun. ROHM's structural-reform plan also prioritizes an early shift from 6-inch to 8-inch production.

Larger wafers can improve manufacturing economics, but the commercial advantage depends on yield, utilization, and defect control. Capacity alone is no longer enough.

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## The Disruption Japan Cannot Ignore: Chinese SiC Pricing Pressure

One of the most important developments is appearing not in product announcements, but in financial disclosures.

ROHM's FY2025 results identify slower BEV growth, excessive upfront SiC investment, aggressive pricing from Chinese SiC device manufacturers and declining demand for 6-inch substrates because of oversupply. The company says Chinese competitors' pricing has already affected its market share in China.

That changes the competitive logic for Japanese suppliers.

The next phase will reward companies capable of lowering cost per die, improving yield, rationalizing overlapping production assets and selling more complete power solutions rather than competing only on a MOSFET specification sheet. This is where a larger integrated Japanese platform could become strategically important: device technology, modules, packaging, manufacturing capacity and customer qualification can increasingly be managed as one cost-and-performance system.

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## Demand Is Moving Beyond the EV Inverter

Automotive remains the leading end-user segment in the DataM Intelligence study, but Japan's 2026 activity shows why suppliers are widening their addressable market.

Toshiba is developing 1200V trench SiC devices and high-frequency SiC module technology for AI data-center power conversion. ROHM is positioning SiC for AI-server backup power and high-voltage DC architectures. Mitsubishi Electric continues advancing xEV SiC while maintaining deep exposure to industrial, railway and infrastructure power electronics. Toshiba's June module development also demonstrated a 30% reduction in simulated total inverter power loss at 60kHz compared with its conventional structure.

AI servers, renewable-energy conversion, energy storage, fast charging, industrial drives and rail traction therefore give Japanese suppliers ways to reduce dependence on a single EV investment cycle.

Competitive Priorities Are Shifting Beyond Device Performance

Japan's SiC competitive landscape is becoming more complex as manufacturers simultaneously manage the transition to larger wafers, new trench architectures, tighter automotive qualification requirements, and increasing pressure on manufacturing costs. Product type and voltage class remain important, but purchasing and partnership decisions are increasingly influenced by wafer scale, substrate quality, packaging reliability, thermal performance and the ability to maintain consistent yields at higher production volumes.

The next competitive divide may therefore emerge between companies that lead primarily through device specifications and those that can combine 200mm manufacturing, fifth-generation SiC MOSFET technology, advanced modules and cost-efficient production within a scalable supply chain. The restructuring discussions among major Japanese suppliers add another dimension, potentially changing how technology portfolios, production assets and customer relationships are positioned over the coming years.

At the same time, demand is becoming less concentrated around conventional EV traction applications. AI-data-center power systems, renewable-energy conversion, industrial drives, rail infrastructure and high-voltage power architectures are creating additional qualification routes for SiC suppliers. Against this backdrop, Chinese pricing pressure is making manufacturing yield, utilization rates, customer qualification, and cost per device increasingly important measures of competitive strength through 2035.

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