GaN Power Semiconductor Market Outlook, Spotlighting Japan and the U.S. as Power Electronics Moves From Chip Selection to Full-System Architecture

PUNE, India, May 13, 2026 - Global Reports Store today announced the release of its latest report, "Gallium Nitride (GaN) Power Semiconductor Market Size, Efficiency Benchmarking, Cost Analysis, Competitive Landscape & Forecast by 2032." The report, published in March 2026 under Report ID 1279, provides 290 pages of analysis across device type, application, voltage range, end user and region, with detailed focus on Power ICs, discrete devices, RF power devices, consumer electronics, electric vehicles, data centers, renewable energy and industrial power systems.

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Global Reports Store estimates that the GaN power semiconductor market reached approximately USD 4.13 billion in 2025 and is expected to climb to around USD 10.55 billion by 2031, reflecting a 16.92% CAGR from 2026 to 2031. The report's public summary also identifies Asia-Pacific as the leading region, while electric vehicles and data centers are the highest-impact demand areas for executive planning.

The real story is not that GaN is gaining attention. The sharper signal is that GaN purchasing is moving away from a simple component-replacement decision and toward a full power-architecture decision. In Japan, companies are tightening control over process technology, power-device manufacturing and gallium-linked supply chains. In the United States, the market is being pulled by AI data-center power density, domestic foundry capacity, and the need to reduce strategic exposure to concentrated gallium supply.

"GaN is becoming a boardroom issue, not only an engineering topic," said a Global Reports Store spokesperson. "For CEOs, CTOs, VPs and product leaders, the question is no longer whether GaN can switch faster than silicon. The question is who can qualify it, package it, supply it, protect the materials flow and give customers a complete reference architecture that shortens time to revenue."

The report shows that Power ICs generated about USD 1.54 billion in 2025, making them the largest device category in the public segmentation. Discrete GaN devices reached roughly USD 1.21 billion, while RF power devices accounted for approximately USD 0.88 billion. On the application side, consumer electronics remained the largest revenue pool at about USD 1.47 billion in 2025, followed by electric vehicles at USD 1.02 billion, data centers at USD 0.76 billion, renewable energy at USD 0.52 billion, and industrial power systems at USD 0.36 billion. The report also segments voltage demand into low voltage below 200V, medium voltage from 200V to 650V, and high voltage above 650V.

For decision makers in Japan and the U.S., these numbers point to a market that is splitting into three commercial lanes. The first is fast-moving, lower-voltage GaN for consumer chargers, adapters, robotics, point-of-load conversion and compact industrial systems. The second is mid- and high-voltage GaN for EV onboard chargers, solar inverters, AI server power and industrial drives. The third is RF GaN for telecom, radar and defense-linked systems, where performance and reliability can matter more than unit cost.

Japan's role is especially important because the country is not only a demand market. It is a supply-chain and process-control market. The U.S. Geological Survey reported that the United States has not recovered primary low-purity gallium domestically since 1987 and had 100% net import reliance for gallium in 2025. It also reported that Japan supplied 22% of U.S. gallium metal imports during 2021-2024, while China accounted for 99% of global primary low-purity gallium production. Japan's estimated low-purity gallium output was 3,000 kilograms in 2025, with 10,000 kilograms of production capacity.

That supply-chain detail changes the meaning of Japan's GaN strategy. Japan is not merely trying to sell better devices; it is trying to preserve leverage across materials, wafers, power-device know-how and OEM qualification. ROHM's February 2026 announcement is a strong example. The company said TSMC's GaN process technology would be transferred to ROHM Hamamatsu, with ROHM aiming to establish a production system in 2027 for applications including AI servers. ROHM also noted that it had established mass production for 150V GaN at ROHM Hamamatsu in March 2022 and adopted a 650V GaN process in 2023.

The United States is moving in a different but equally strategic direction. The strongest U.S. theme is secure, scalable GaN manufacturing tied to AI infrastructure. In November 2025, GlobalFoundries and Navitas announced a long-term partnership to accelerate U.S.-based GaN technology, design and manufacturing. The companies said next-generation GaN would be manufactured at GlobalFoundries' Burlington, Vermont facility, with development expected in early 2026 and production expected later in the year.

This is where the sales model is changing. GaN suppliers are no longer relying only on data sheets and distributor availability. They are increasingly selling complete design paths: reference boards, evaluation kits, compatible drivers, packaging support, integrated power stages and "ready-to-adapt" architectures. Renesas is a clear example. In March 2026, the company introduced a bidirectional 650V-class GaN switch for solar microinverters, AI data centers and onboard EV chargers. The part carries a ±650V continuous peak rating, ±800V transient rating, 110 mΩ typical on-resistance and more than 100 V/ns dv/dt immunity, and Renesas said the device was available in quantity.

AI data centers are now the most disruptive demand signal for U.S. GaN suppliers. NVIDIA has described 800 VDC architecture as a path for next-generation AI factories, saying legacy 54 VDC rack power becomes a bottleneck as racks move toward megawatt-scale power. NVIDIA also identified silicon partners including Navitas, onsemi, Renesas, ROHM, STMicroelectronics and Texas Instruments in its 800 VDC ecosystem.

Texas Instruments moved directly into this architecture shift in March 2026 by unveiling a complete 800 VDC power architecture for future AI data centers with NVIDIA. TI said its approach requires only two conversion stages from 800V to processor power, and its 800V-to-6V DC/DC bus converter uses integrated GaN power stages while delivering 97.6% peak efficiency and more than 2,000 W/in3 power density for compute tray applications.

The material risk behind GaN is also becoming more visible. Global Reports Store's report notes that gallium prices had risen 123% since early 2025, reflecting supply pressure and geopolitical disruption. That finding is reinforced by U.S. government data showing that U.S. gallium metal imports were estimated at 25,000 kilograms in 2025, more than double the 11,000 kilograms recorded in 2024, while the average import value rose to USD 580 per kilogram, about 30% higher than in 2024. China lifted its ban on gallium exports to the United States for one year in November 2025, after earlier export controls and a December 2024 ban.

For executives, this means the winning GaN strategy is not simply to identify the lowest-cost die. It is to secure the right combination of wafer source, package design, application architecture, regional manufacturing path and qualification support. Companies that treat GaN as a procurement item may miss the larger shift. Companies that treat GaN as a power-system platform can use it to reduce size, simplify cooling, raise conversion efficiency and shorten product-design cycles.

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Key Developments

1. GlobalFoundries and Navitas created a U.S. GaN manufacturing path for AI and critical power. In November 2025, the companies announced a long-term partnership to develop and manufacture next-generation GaN at GlobalFoundries' Burlington, Vermont facility, targeting AI data centers, energy infrastructure, grid systems and industrial electrification.

2. ROHM moved to bring TSMC GaN process technology into Japan. In February 2026, ROHM said TSMC's process technology would be transferred to ROHM Hamamatsu, with a 2027 production-system target and AI server power demand specifically mentioned as a driver.

3. Texas Instruments tied GaN to NVIDIA's 800 VDC AI data-center architecture. In March 2026, TI unveiled an 800 VDC architecture with NVIDIA, including an 800V-to-6V bus converter using integrated GaN power stages and delivering 97.6% peak efficiency with more than 2,000 W/in3 power density.

4. Renesas launched a bidirectional 650V-class GaN switch from Japan into U.S. APEC visibility. The March 2026 launch targeted solar microinverters, AI data centers and onboard EV chargers, with the TP65B110HRU available in quantity and supported by evaluation kits and system-level "Winning Combinations."

5. onsemi and Innoscience moved toward high-volume GaN commercialization. In December 2025, Arizona-based onsemi signed an MoU with Innoscience to explore GaN production using a 200mm GaN-on-silicon process, starting with 40-200V devices and expected sampling in the first half of 2026.

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Global Reports Store provides market intelligence for leadership teams across semiconductors, electronics, energy, automotive, industrial technology and emerging infrastructure markets. Its research supports CEOs, CTOs, VPs, product managers, strategy teams and investors with data-led analysis, competitive mapping, segmentation insight and country-level market interpretation for high-value business decisions.

This release was published on openPR.