GaN on Silicon Epitaxy (Epi) Wafers Market Share Driven by Adoption in High-Frequency and Power Electronics | Valuates Reports

GaN on Silicon Epitaxy (Epi) Wafers Market Size
The global market for GaN on Silicon Epitaxy (Epi) Wafers was valued at US$ 125 million in the year 2024 and is projected to reach a revised size of US$ 449 million by 2031, growing at a CAGR of 20.3% during the forecast period.

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The GaN on Silicon Epitaxy (Epi) Wafers Market is gaining strong traction as industries transition toward high-efficiency semiconductor materials capable of supporting high-power, high-frequency, and high-performance electronic systems. Market trends indicate increasing demand driven by the expansion of 5G communications, data center power systems, electric vehicles, and advanced LED technology. The overall market size continues to expand as manufacturers shift from legacy silicon technologies to GaN-based architectures to improve power density, switching speeds, and energy efficiency-factors that are accelerating market growth and adoption across multiple industries.

Within the type segment, 6 inch GaN on Si epi wafers currently hold the largest market share due to their maturity in manufacturing, stronger supply chain availability, and widespread adoption across RF and power semiconductor fabrication lines. However, 8 inch GaN on Si epi wafers are gaining momentum as leading semiconductor foundries invest in scaling GaN processes to larger formats, enabling higher throughput, improved cost efficiency, and more advanced device integration. The transition to larger wafer diameters reflects broader market trends focused on increasing yield, reducing production costs, and supporting high-volume commercial manufacturing.

In terms of application, the GaN RF devices segment accounts for a significant portion of the market share as GaN technology plays a key role in 5G base stations, radar systems, satellite communications, and high-power wireless infrastructure. The GaN power devices segment is experiencing rapid market growth due to expanding use in electric vehicles, consumer power adapters, industrial power systems, and renewable energy inverters. Additionally, emerging applications such as Micro-LED displays and advanced optoelectronic systems are contributing to rising demand for precise, high-performance epitaxial wafer technology, reinforcing the market's upward adoption trajectory.

The market is led by prominent companies with strong expertise in epitaxial wafer technology and integrated GaN production solutions. Major players such as IQE, Soitec (EpiGaN), Transphorm Inc., Sumitomo Chemical, NTT Advanced Technology, DOWA Electronics Materials, Episil-Precision, Epistar, Enkris Semiconductor, Innoscience, and Qingdao Cohenius Microelectronics hold considerable market share through innovations in epitaxial quality, defect reduction, substrate engineering, and large-scale GaN manufacturing. Many of these companies have expanded partnerships with foundries, device makers, and OEMs, enabling strong alignment with industry requirements in RF, power electronics, and optoelectronics.

Regionally, Asia-Pacific dominates production and consumption, driven by the strong semiconductor manufacturing ecosystems of China, Japan, South Korea, and Taiwan. This region benefits from government initiatives, expanding fabrication capacity, and large-scale investment in next-generation electronics. North America and Europe also hold substantial market share, supported by leading RF and power semiconductor developers and growing emphasis on high-efficiency power systems, aerospace, and defense applications. The market forecast points to continued expansion as companies invest in larger wafer formats, advanced epitaxy techniques, and wider commercialization of GaN-based device architectures across communications, power electronics, mobility, and display technologies.

by Type

• 6 Inch GaN on Si Epi Wafer
• 8 Inch GaN on Si Epi Wafer

by Application

• GaN RF Devices
• GaN Power Devices
• Others (Micro-LEDs, etc.)

By Company

IQE, Soitec (EpiGaN), Transphorm Inc., Sumitomo Chemical (SCIOCS), NTT Advanced Technology (NTT-AT), DOWA Electronics Materials, BTOZ, Episil-Precision Inc, Epistar Corp., Enkris Semiconductor Inc, Innoscience, Runxin Microelectronics, CorEnergy, Suzhou Nanowin Science and Technology, Qingdao Cohenius Microelectronics, Shaanxi Yuteng Electronic Technology

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