Press release
IGBT and Super Junction MOSFET Market to Surge to US$ 50.78 Billion at a CAGR of 12.1% Expected Growth From 2025 to 2034
In 2024, the IGBT and super junction MOSFET market was estimated to be worth USD 16.31 billion. At a CAGR of 12.1% from 2025 to 2034, it is anticipated to increase from USD 18.22 billion in 2025 to USD 50.78 billion by 2034.Key reasons responsible for the growth are:
• The growing electric vehicle (EV) industry is a major factor driving the need for IGBT and super junction MOSFETs.
• The rising emphasis on extended driving ranges and enhanced battery efficiency drives the market for IGBT and super junction MOSFET.
• The increasing integration of renewable energy sources such as solar and wind is fueling market expansion.
• The rising power demands of data centers is propelling the increased adoption of IGBT and super junction MOSFETs.
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What Is IGBT and Super Junction MOSFET?
Insulated gate bipolar transistors (IGBTs) and super junction MOSFETs (SJ MOSFETs) are power semiconductor devices used in high-power applications. IGBTs offer high current carrying capability and lower conduction losses, while SJ MOSFETs excel in fast switching and low on-state voltage. IGBTs, which are three-terminal power semiconductor devices, allow for switching and amplifying electronic signals, combining the features of a MOSFET and a BJT. They are controlled by a voltage applied to the gate, similar to a MOSFET, but they also have a bipolar transistor structure for high current handling. SJ MOSFETs are a type of MOSFET with a super-junction structure designed to overcome the limitations of planar structure.
Industry Developments - IGBT and Super Junction MOSFET Market:
• June 2024: Infineon Technologies introduced its latest 600 V CoolMOSTM S7TA MOSFET, specifically engineered for automotive electronic systems. The new device features an integrated, high-precision temperature sensor, enhancing thermal management and reliability in demanding automotive environments.
• January 2024: Alpha and Omega Semiconductor Limited unveiled two new αMOS5 600V Fast Recovery Diode (FRD) MOSFETs. These devices are designed for high-efficiency applications, including servers, solar inverters, and electric vehicle (EV) charging systems, offering improved power density and performance.
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Competitive Landscape:
The market environment includes a combination of international platers and local competitors competing for IGBT and super junction MOSFET market share via innovation, strategic alliances, and geographic growth. A few of them are:
• Diodes Incorporated
• Fuji Electric Co., Ltd.
• Infineon Technologies AG
• Littelfuse
• MACMIC
• Mitsubishi Electric Corporation
• NXP Semiconductors.
• ROHM Co., Ltd.
• Semiconductor Components Industries, LLC
• Semikron Danfoss
• StarPower Europe AG
• STMicroelectronics
• TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
• Vishay Intertechnology, Inc.
IGBT and Super Junction MOSFET Market Report Highlights:
• In terms of type, the IGBT segment led the IGBT and super junction MOSFET market in 2024, primarily due to its extensive use in high-power applications such as industrial automation, renewable energy systems, and electric vehicles, where efficiency and reliability are critical.
• Based on application, the electric vehicle segment is anticipated to experience the fastest growth during the forecast period, fueled by the global shift toward sustainable transportation and the increasing adoption of EVs worldwide.
• In 2024, Asia Pacific accounted for the largest share of the IGBT and super junction MOSFET market, supported by rapid industrialization, urbanization, and a well-established electronics manufacturing ecosystem, particularly in countries like China, Japan, and South Korea.
• The North America IGBT and super junction MOSFET market is expected to grow at the fastest rate during the forecast period, driven by significant investments in electric mobility, renewable energy projects, and the expansion of data center infrastructure.
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Segmental Overview:
• The IGBT and super junction MOSFET market is segmented based on type, application, and region.
• By type, the IGBT segment led the market in 2024 because of its extensive use in high-power applications, including industrial automation, renewable energy systems, and electric vehicles.
• The electric vehicle segment, based on application, is anticipated to experience the fastest growth during the forecast period, fueled by the global shift towards sustainable transportation.
By Type Outlook (Revenue, USD Billion, 2020-2034)
• IGBT
o Discrete IGBT
o IGBT Module
• Super Junction MOSFET
o Discrete Super Junction MOSFET
o Super Junction MOSFET Module
By Application Outlook (Revenue, USD Billion, 2020-2034)
• Energy and Power
• Consumer Electronics
• Inverter and UPS
• Electric Vehicle
• Industrial System
• Others
Region-Wise Analysis:
• North America
o Type Outlook
• IGBT
o Discrete IGBT
o IGBT Module
• Super Junction MOSFET
o Discrete Super Junction MOSFET
o Super Junction MOSFET Module
o Application Outlook
• Energy and Power
• Consumer Electronics
• Inverter and UPS
• Electric Vehicle
• Industrial System
• Others
• Europe
o Type Outlook
• IGBT
o Discrete IGBT
o IGBT Module
• Super Junction MOSFET
o Discrete Super Junction MOSFET
o Super Junction MOSFET Module
o Application Outlook
• Energy and Power
• Consumer Electronics
• Inverter and UPS
• Electric Vehicle
• Industrial System
• Others
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