Global GaN Power Module Market Growing Demand for Efficient Power Solutions 2023 to 2028 | Efficient Power Conversion Corporation, Cree Incorporated, Texas Instruments

"GaN Power Module Market" report provides, wherever applicable and relevant, technical data of products, and sheds useful light on expected commercial production dates and current R&D status shared by Infinitybusinessinsights.com. This report will help the viewer in Better Decision Making.

In 2022, the GaN Power Module Market was estimated to be worth USD 180.2 million. By 2030, it is anticipated to reach USD 2,989.02 million, expanding at a CAGR of 36.80% from 2023 to 2028. Power semiconductor components are used in electronic circuits to regulate the system's energy transfer. Most gadgets use a sort of power semiconductor device called a switched mode power supply (SMPS). GaN power module are made of the semiconductor gallium nitride (GaN). GaN power components reduce the overall energy loss of the system. Compared to conventional transistors, which require more chip area to lower on-resistance, GaN devices are compact, offer high-speed switching, and reduce system size.

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The Key companies profiled in the GaN Power Module Market:
The study examines the GaN Power Module Market's competitive landscape and includes data on Efficient Power Conversion Corporation, Cree Incorporated, Texas Instruments, NXP Semiconductors N.V., Transphorm Inc, GaN Systems Inc, Qorvo, Fujitsu Limited, Infineon Technologies AG, OSRAM Opto Semiconductors & Others.

Global GaN Power Module Market Split by Product Type and Applications

This report segments the GaN Power Module Market on the basis of Types:
Embedded Type
Ordinary Type

On the basis of Application, the GaN Power Module Market is segmented into:
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Others

It is anticipated that as prices fall across different industries, demand for GaN power module would increase. GaN power transistors and modules that were recently produced have a wide band gap and offer performance comparable to SiC at a significant cost savings. The market's largest contributor, the GaN power module sector, is anticipated to expand at a CAGR of 34.80% over the course of the projected year. GaN power modules are becoming increasingly well-known around the world due to their unrivalled durability and effectiveness. Many industries employ IGBT and MOSFET modules to power high-voltage equipment including welders, rolling mills, and water pumps.

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Four geographical regions make up the global market for GaN power module: North America, Europe, Asia-Pacific, and LAMEA. The market for GaN power devices is dominated by North America, which is anticipated to expand at a CAGR of 35.70% over the forecast period. Due to the existence of countries like the U.S. and Canada, where the governments are stepping up their involvement in the fight against pollution by supporting the use of EVS and HEVs, which extensively employ GaN power devices, North America is the market leader for GaN power module. During the forecast period, it is predicted that Europe would increase at a CAGR of 37.20 percent and produce USD 843.55 million. Of all the European countries, Germany has the largest market share.

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Market Segmentation:
GaN Power Module Market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

The global market is divided into consumer electronics, IT and communications, automotive, aerospace and defence, and other segments based on the industrial vertical. The market share leader and expected to expand at the highest CAGR of 36.80% throughout the projection period is the IT and telecommunications category. GaN devices must run high-power and high-speed electron devices in communications due to their special properties, such as their huge energy band gap and high saturation electron velocity. The GaN high electron mobility transistor (HEMT) exhibits better properties in high power and broadband applications than the Gallium Arsenide (GaAs) devices that are already in use. Due to the high power density and relatively high impedance of these devices, wideband power microwave systems in communication now have new opportunities.

Major Point of Table of Contents:
Chapter 1 Industry Overview
Chapter 2 Global GaN Power Module Competition by Types, Applications, and Top Regions and Countries
Chapter 3 Production Market Analysis
Chapter 4 Global GaN Power Module Sales, Consumption, Export, Import by Regions (2017-2022)
Chapter 5 North America GaN Power Module Market Analysis
Chapter 6 East Asia GaN Power Module Market Analysis
Chapter 7 Europe GaN Power Module Market Analysis
Chapter 8 South Asia GaN Power Module Market Analysis
Chapter 9 Southeast Asia GaN Power Module Market Analysis
Chapter 10 Middle East GaN Power Module Market Analysis
Chapter 11 Africa GaN Power Module Market Analysis
Chapter 12 Oceania GaN Power Module Market Analysis
Chapter 13 South America GaN Power Module Market Analysis
Chapter 14 Company Profiles and Key Figures in GaN Power Module Business
Chapter 15 Global GaN Power Module Market Forecast (2023-2028)
Chapter 16 Conclusions
Research Methodology...

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