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Global SiC & GaN Power Devices Sales Market Report 2023

03-21-2023 10:39 AM CET | Advertising, Media Consulting, Marketing Research

Press release from: Valuates Reports

Due to the COVID-19 pandemic, the global SiC & GaN Power Devices market size is estimated to be worth US$ 1042.9 million in 2022 and is forecast to a readjusted size of US$ 7633.3 million by 2029 with a CAGR of 32.5% during the forecast period 2023-2029.

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.

Global SiC & GaN Power Devices main players are Infineon, Rohm, Mitsubishi, STMicro, Inc, Thales cryogenics, AIM, etc. Global top four manufacturers hold a share over 80%. Europe is the largest market, with a share nearly 35%.

View Full Report: https://reports.valuates.com/market-reports/QYRE-Auto-18Y625/global-sic-gan-power-devices-sales

Segment by Type
• GaN
• SiC

Segment by Application
• Automotive & Transportation
• Consumer Electronics
• Industrial Use
• Others

BY REGION
• China
• Europe
• India
• Japan
• Other Regions
• Southeast Asia
• United States

BY COMPANY
• Efficient Power Conversion (EPC)
• Fuji
• GaN Systems
• GeneSic
• Infineon
• Microchip Technology
• Mitsubishi
• Rohm
• STMicro
• Toshiba
• United Silicon Carbide Inc.
• VisIC Technologies LTD

Inquire for Sample:
https://reports.valuates.com/request/sample/QYRE-Auto-18Y625/Global_SiC_GaN_Power_Devices_Market

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