GaN RF Devices Market Analysis, Key Company Profiles, Types, Applications and Forecast to 2030

A bandgap semiconductor utilised in light-emitting diodes is gallium nitride. It has a 3.4 electron volt wide-bandgap (eV). GaN has exceptionally high electron mobility, saturation velocity, and breakdown voltages. It is appropriate for microwave-frequency RF power amplifiers and high-voltage switching devices for power grids. The GaN device can operate at greater voltages than conventional semiconductor devices because these materials have a large breakdown field. They are divided into RF Front-End Equipment and RF Terminal Equipment based on the product. GaN RF devices have several uses in the fields of consumer electronics, industrial use, aerospace & defence, and other applications.

GaN RF Devices Market Overview:

Over the next years, the GaN RF Devices Market is anticipated to be driven by the rising demand for smartphones, gaming consoles, laptops, and TVs. Additionally, data transfer via a network without human-to-computer interaction is required for the effective adoption of IoT, and technical developments in this area are anticipated to enhance the industry in the next years. Additionally, the electrical characteristics of GaN, such as its high breakdown voltage, higher saturation velocity, high thermal conduction, and a large electric field, are anticipated to drive the market during the anticipated period. Power electronics are in high demand due to their low power consumption and high efficiency.

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Global GaN RF Devices Market: Major Players
AMPLEON
RFHIC
Infineon Technologies
Sumitomo
TOSHIBA
Cree
MACOM
Qorvo
NXP Semiconductors
Microsemi
GAN Systems

Global GaN RF Devices Market: Types
GaN-on-Si
GaN-on-SiC
Others

Global GaN RF Devices Market: Applications
Cellular infrastructure
Defense and military
CATV
Satcom
Wimax
Others

Global GaN RF Devices Market: Regional Analysis
All the regional segmentation has been studied based on recent and future trends, and the market is forecasted throughout the prediction period. The countries covered in the regional analysis of the Global GaN RF Devices market report are U.S., Canada, and Mexico in North America, Germany, France, U.K., Russia, Italy, Spain, Turkey, Netherlands, Switzerland, Belgium, and Rest of Europe in Europe, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, China, Japan, India, South Korea, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), and Argentina, Brazil, and Rest of South America as part of South America.

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• Qualitative and quantitative analysis of the market based on segmentation involving both economic as well as non-economic factors

• Provision of market value (USD Billion) data for each segment and sub-segment

• Indicates the region and segment that is expected to witness the fastest growth as well as to dominate the market

• Analysis by geography highlighting the consumption of the product/service in the region as well as indicating the factors that are affecting the market within each region

• Competitive landscape which incorporates the market ranking of the major players, along with new service/product launches, partnerships, business expansions, and acquisitions in the past five years of companies profiled

• Extensive company profiles comprising of company overview, company insights, product benchmarking, and SWOT analysis for the major market players

• The current as well as the future market outlook of the industry with respect to recent developments (which involve growth opportunities and drivers as well as challenges and restraints of both emerging as well as developed regions

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