Dynamic Random Access Memory (DRAM) Market 2022 Driving Factors Forecast Research 2028

The global DRAM market is anticipated to grow at a CAGR of around 8.3% during the forecast period. DRAM is a type of semiconductor memory or an electronic device used as a computer memory in which digital data is stored in form of small bits on the capacitors incorporated inside the integrated circuit board/chip. The market is expected to witness growth in demand due to the increasing use of semiconductor components in various verticals such as consumer electronics, automotive, gaming consoles, IT, and telecom. Increasing smartphones and other consumer electronics devices are the major factors driving the demand for DRAMs. Moreover, the emergence of ultra-thin notebooks, mobile devices with less power consumption and high performance, growing demand for cloud computing, and the need for high-speed communication devices are also the factors boosting the adoption of DRAMs, which in turn, driving the market growth. Growing data centers and increasing cloud servers globally are creating the demand for DRAMs as a high-density memory to store a large amount of data with less power consumption and strong backup facilities. Moreover, the increasing adoption of microcontrollers and memory ICs in automotive electronics has also accelerated the need for DRAMs.

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Factors such as the high cost of R&D, growing cost of design and integration of memory circuits, and increasing substitutes for DRAMS such as NAND flash memory are expected to hamper the market growth during the forecast period. Furthermore, the increasing use of DRAMs in wearable gadgets and high-performance devices in data centers, and emerging economies are anticipated to offer lucrative growth opportunities during the forecast period.

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• Market Coverage
• Market number available for - 2022-2028
• Base year- 2021
• Forecast period- 2022-2028
• Segment Covered- By Source, By Product Type, By Applications
• Competitive Landscape- Archer Daniels Midland Co., Ingredion Inc., Kerry Group Plc, Cargill
• Inc., and others

Market Segmentation
Global DRAM Market, By Type
o Synchronous DRAM (SDRAM)
o Rambus DRAM (RDRAM)
o Double Data Rate SDRAM (DDR SDRAM)
o Fast Page Mode DRAM (FPM DRAM)
o Extended data out DRAM (EDO DRAM)

Global DRAM Market, By Technology
o DDR4
o DDR3
o DDR5
o DDR2

Global DRAM Market, By Application
o Computing Devices
o Consumer Electronics
o Automotive
o Gaming Consoles & Networking Devices
o Data Center
o Others (Graphics)

Regional Analysis
o North America
o United States
o Canada
o Europe
o UK
o Germany
o Italy
o Spain
o France
o Rest of Europe
o Asia-Pacific
o China
o India
o Japan
o South Korea
o Rest of Asia-Pacific
o Rest of the World
o Latin America
o Middle East & Africa

Company Profiles
o Advanced Micro Device Inc.
o Alliance Memory, Inc
o ATP Electronics,Inc.
o Centon Electronics
o Etron Technology, Inc.
o Intel Corp.
o Innodisk Corp.
o Infineon Technologies AG
o Integrated Silicon Solution Inc.
o Kingston Technology Corp.
o LAPIS Semiconductor Co., Ltd.
o Micron Technology, Inc.
o Macronix International Co., Ltd.
o Nanya Technology Corp
o NEC Corp.
o Nvidia Corp, etc.
o Om Nanotech Pvt. Ltd
o Powerchip Technology Corp.
o Panasonic Corp.
o Qualcomm Inc.
o Renesas Electronics Corp
o Samsung Electronics Co. Ltd.
o SK Hynix Inc.
o Taiwan Semiconductor Manufacturing Company, Ltd.
o Texas Instruments Inc.
o Toshiba Corp.
o Winbond Electronics Corp.

The Report Covers
• Market value data analysis of 2020 and forecast to 2027.
• Annualized market revenues ($ million) for each market segment.
• Country-wise analysis of major geographical regions.
• Key companies operating in the global DRAM market. Based on the availability of data, information related to pipeline products, and relevant news is also available in the report.
• Analysis of business strategies by identifying the key market segments positioned for strong growth in the future.
• Analysis of market-entry and market expansion strategies.
• Competitive strategies by identifying 'who-stands-where' in the market.

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