GaN Epitaxial Wafers Market Analysis by 2028 - Infineon Technologies AG, Koninklijke Philips N.V., Mitsubishi Electric Corporation, NTT Advanced Technology Corporation

GaN Epitaxial Wafers Market Forecast to 2028 - COVID-19 Impact and Global Analysis By Product Type (GaN Homoepitaxial Epitaxial Wafer, GaN Heteroepitaxial Epitaxial Wafer); Wafer Size (2-Inch Wafer, 4-Inch Wafer, 8-Inch and Above Wafe); Application (LEDs, Lasers, Radio Frequency Devices, Power Drives, Transistors, Others); End-user Industry (IT and Telecommunications, Industrial, Automotive, Renewable, Consumer Electronics, Military, Defense and Aerospace, Medical and Healthcare, Others) and Geography

GaN Substrate's primary advantages are high electron mobility, reduced switching losses, and fewer lattice mismatches, which are driving its usage in fields including power electronics and optoelectronics. A wafer of semiconducting material formed through epitaxial growth (epitaxy) for application in photonics, microelectronics, spintronics, or photovoltaics is known as an epitaxial wafer. Gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminium, nitrogen, phosphorus, or arsenic make up the epitaxial layers.

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Due to its ability to work at high frequency and high temperature, GaN is widely used in radio frequency devices, light-emitting diodes (LEDs), and power electronics. The market for GaN epitaxial wafers is being boosted by the increasing popularity of LEDs. Furthermore, advances in GaN technology have resulted in the creation of efficient GaN substrates with low defect density and free macro defects. As a result, GaN substrates are increasingly being used to make LEDs with wafer diameters ranging from 2 inches to 6 and 8 inches. During the forecast period, the GaN epitaxial wafers market is expected to rise due to the increasing adoption of LEDs.

The global GaN Epitaxial Wafers Market is segmented on the basis of product type, wafer size, application, end-user industry. On the basis of product type, the market is segmented into GAN homoepitaxial epitaxial wafer and GAN heteroepitaxial epitaxial wafer. Based on wafer size the market is segmented into the 2-inch wafer, 4-inch wafer, and 8-inch and above wafer. Based on application the market is segmented into LEDs, lasers, radiofrequency devices, power drives, transistors, and others. Based on the end-user industry, the market is segmented into IT AND telecommunications, industrial, automotive, renewable, consumer electronics, military, defense and aerospace, medical and healthcare, and others.

Top Listed Players in GaN Epitaxial Wafers Market are-

- Aixtron
- ALLOS Semiconductors GmbH
- EpiGaN nv
- Infineon Technologies AG
- Koninklijke Philips N.V.
- Mitsubishi Electric Corporation
- NTT Advanced Technology Corporation
- RF Globalnet
- SweGaN
- Toshiba Infrastructure Systems and Solutions Corporation

The "Global GaN Epitaxial Wafers Market Analysis to 2028" is a specialized and in-depth study of the GaN Epitaxial Wafers Market with a special focus on the global market trend analysis. The report aims to provide an overview of the GaN Epitaxial Wafers Market with detailed market segmentation by product type, wafer size, application, end-user industry, and geography. The global GaN Epitaxial Wafers Market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading GaN Epitaxial Wafers Market players and offers key trends and opportunities in the GaN Epitaxial Wafers Market.

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