Gallium Nitride Transistor Market 2021 Analysis by Global Manufacturers – GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas

The "Gallium Nitride Transistor" Market report offers qualitative and quantitative insights and a detailed analysis of market size & growth rate for all possible segments in the market. The Global Gallium Nitride Transistor Industry presents a market overview, product details, classification, and market concentration. The report also provides an in-depth survey of key players in the market which is based on various competitive intelligence parameters like company profiles, product picture and specification, capacity, production, price, cost, revenue, and contact information. The Gallium Nitride Transistor Market report provides an in-depth study of SWOT analysis i.e. Strength, Weakness, Opportunities, and Threat to the organization.

The global Gallium Nitride Transistor Market is expected to grow at a CAGR of 8.21% during forecast period (2021-2027).

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Top Companies in the Global Gallium Nitride Transistor Market: GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, and others.

Market Overview:

Gallium nitride (GaN) transistors offer fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density.

Industry News and Updates:

Infineon introduces CoolGaN™ IPS family for applications in the 30 to 500 W power range- Munich, Germany

4 May 2021 – Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) adds the new CoolGaN™ IPS family of integrated power stage (IPS) products to its broad portfolio of WBG power devices. The initial IPS portfolio consists of half-bridge and single-channel products, targeting low-to medium power applications, including chargers and adapters and switched-mode power supplies (SMPS).

The 600 V CoolGaN half-bridge IPS IGI60F1414A1L is ideally suited for compact and lightweight designs in the low-to-medium power range. Coming in a thermally enhanced 8x8 QFN-28 package, it enables systems with very high power density. The product combines two 140 mΩ / 600 V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side gate drivers out of Infineon’s EiceDRIVER™ family.

The IGI60F1414A1L is easy to control due to the isolated gate driver with two digital PWM inputs. The integrated isolation function, the clean separation of digital and power ground and the reduced complexity of the PCB layout are crucial in achieving shorter development time, lower system bill-of-material and lower total cost. The gate driver’s input-to-output isolation is based on Infineon’s proven on-chip coreless transformer (CT) technology. This guarantees high speed and excellent robustness even for extremely fast switching transients with voltage slopes exceeding 150 V/ns.

This report segments the global Gallium Nitride Transistor market on the basis of Types is:

100V

400V

600V

650V

On the basis of Application, the global Gallium Nitride Transistor market is segmented into:

Consumer Electronics

Automotive

Medical Industry

Others

The research study evaluates the overall size of the market, by making use of a bottom-up approach, wherein data for different industry verticals, and end-user industries and its applications across various product types have been recorded and predicted during the forecast period. These segments and sub-segments have been documented from the industry specialists and professionals, as well as company representatives, and are outwardly validated by analysing previous year's data of these segments and sub-segments for getting an accurate and complete Gallium Nitride Transistor market size.

Influence of the Gallium Nitride Transistor Market Report:

-Comprehensive assessment of all opportunities and risk in the Gallium Nitride Transistor market.

-Gallium Nitride Transistor market recent innovations and major events.

-Detailed study of business strategies for growth of the Gallium Nitride Transistor market-leading players.

-Conclusive study about the growth plot of Gallium Nitride Transistor market for forthcoming years.

-In-depth understanding of Gallium Nitride Transistor market-particular drivers, constraints and major micro markets.

-Favourable impression inside vital technological and market latest trends striking the Gallium Nitride Transistor market.

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Table Of Content

Chapter 1 Study Coverage

Chapter 2 Executive Summary

Chapter 3 Gallium Nitride Transistor Market Competitor Landscape by Players

Chapter 4 Gallium Nitride Transistor Market Size by Type and Application

Chapter 5 Global and Regional Analysis

Chapter 6 Company Profiles

Chapter 7 Market Opportunities, Challenges, Risks and Influences Factors Analysis

Chapter 8 Value Chain and Sales Channels Analysis

Chapter 9 Research Findings and Conclusion

Chapter 10 Methodology/Research Approach

Finally, the Gallium Nitride Transistor Market report is the believable source for gaining the market research that will exponentially accelerate your business. The report gives the principal locale, economic situations with the item value, benefit, limit, generation, supply, request and market development rate and figure, and so on. Gallium Nitride Transistor industry report additionally Presents a new task SWOT examination, speculation attainability investigation, and venture return investigation.

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