Press release
Gallium Nitride (GaN) Power Devices Market 2021 Analysis by Top Manufacturers - Transphorm Inc, Fujitsu Limited, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments
Global Gallium Nitride (GaN) Power Devices Market Size, Status and Forecast 2021-2026The report presents an in-depth assessment of the Gallium Nitride (GaN) Power Devices Market including enabling technologies, key trends, market drivers, challenges, standardization, regulatory landscape, deployment models, operator case studies, opportunities, future roadmap, value chain, ecosystem player profiles and strategies. The report also presents forecasts for Gallium Nitride (GaN) Power Devices from 2021 till 2026.
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The report presents the market competitive landscape and a corresponding detailed analysis of the major vendor/key players in the market. Top Companies in the Global Gallium Nitride (GaN) Power Devices Market: Transphorm Inc, Fujitsu Limited, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, Qorvo, Inc, and others.
Industry News:
November 07, 2019, GOLETA, Calif.- Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified 650 V gallium nitride (GaN) semiconductors—disclosed that it has shipped more than 500 thousand high voltage GaN FETs. The company hit this milestone as customers continue to adopt its high quality-high reliability GaN platform.
Tokyo and Kawasaki, Japan, August 10, 2018
Fujitsu Limited and Fujitsu Laboratories Ltd. today announced that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN)(1) high electron mobility transistors (HEMT)(2), effectively tripling the output power of transistors used for transmitters in the microwave band. The GaN HEMT technology can serve as a power amplifier for equipment such as weather radar - by applying the developed technology to this area, it is expected that the observation range of the radar will be expanded by 2.3 times, enabling early detection of cumulonimbus clouds that can develop into torrential rainstorms.
Global Gallium Nitride (GaN) Power Devices Market Split by Product Type and Applications:
This report segments the global Gallium Nitride (GaN) Power Devices market on the basis of Types are:
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
On the basis of Application, the Global Gallium Nitride (GaN) Power Devices market is segmented into:
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Military
Others
Regional Analysis For Gallium Nitride (GaN) Power Devices Market:
North America (The United States, Canada, and Mexico)
Europe (Germany, France, UK, Russia, and Italy)
Asia-Pacific (China, Japan, Korea, India, and Southeast Asia)
South America (Brazil, Argentina, Colombia, etc.)
The Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, and South Africa)
Browse the Report Description And TOC:
https://www.marketinsightsreports.com/reports/02092595717/global-gallium-nitride-gan-power-devices-market-research-report-2021?Mode=07
Influence of the Gallium Nitride (GaN) Power Devices Market Report:
-Comprehensive assessment of all opportunities and risks in the Gallium Nitride (GaN) Power Devices market.
-The detailed study of business strategies for the growth of the Gallium Nitride (GaN) Power Devices market-leading players.
-Conclusive study about the growth plot of the Gallium Nitride (GaN) Power Devices market for forthcoming years.
-In-depth understanding of Gallium Nitride (GaN) Power Devices market-particular drivers, constraints, and major micro markets.
-Favorable impression inside vital technological and market latest trends striking the Gallium Nitride (GaN) Power Devices market.
What are the market factors that are explained in the report?
-Key Strategic Developments: The study also includes the key strategic developments of the market, comprising R&D, new product launch, M&A, agreements, collaborations, partnerships, joint ventures, and regional growth of the leading competitors operating in the market on a global and regional scale.
-Key Market Features: The report evaluated key market features, including revenue, price, capacity, capacity utilization rate, gross, production, production rate, consumption, import/export, supply/demand, cost, market share, CAGR, and gross margin. In addition, the study offers a comprehensive study of the key market dynamics and their latest trends, along with pertinent market segments and sub-segments.
-Analytical Tools: The Global Gallium Nitride (GaN) Power Devices Market report includes the accurately studied and assessed data of the key industry players and their scope in the market by means of a number of analytical tools. The analytical tools such as Porter’s five forces analysis, SWOT analysis, feasibility study, and investment return analysis have been used to analyze the growth of the key players operating in the market.
Customization of the Report: This report can be customized as per your needs for additional data up to 3 companies or countries or 40 analyst hours.
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