GaN Power Device Market 2021 Global Industry Analysis, Size, Segmentation, Trends Challenges, Growth Factors and Leading Players To 2027

global GaN Power device market was estimated at $110.3 million in 2019 and is expected to hit $1.24 billion by 2027, registering a CAGR of 35.4% from 2020 to 2027. The report provides a detailed analysis of the top investment pockets, top winning strategies, drivers & opportunities, market size & estimations, competitive landscape, and changing market trends.

Decrease in prices of GaN devices, increase in demand for GaN devices for wireless charging, and rise in adoption of GaN devices in electric vehicle have boosted the growth of the global GaN power device market. In addition, increase in requirement of GaN devices for commercial RF applications augments the growth of the market. On the other hand, lack of availability of GaN material hampers the market growth to some extent. Moreover, government initiatives in HVDC and smart grid are expected to create an array of opportunities in the industry.

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Allied Market Research recently published a report titled, “GaN Power Device Market: Global Opportunity Analysis and Industry Forecast 2020-2027’’.The market report presents the top factors and market trends that are real behind the growth of the market. It also offers an extensive study of evolving market dynamics, top investment pockets, key sections, competitive scenarios, value chain, and major investment prospects. These figures and data are helpful for startups, stakeholders, investors, and the key market players to obtain useful understandings and visions on the market and implement necessary strategies based on the same.

GaN Power Device Market Competitive Analysis:

The key market players analyzed in the global GaN power device market report are GaN Systems, Efficient Power Conversion Corporation (EPC), Panasonic Corporation, On Semiconductors, Texas Instruments Inc., VisIC, Fujitsu Limited, Toshiba Corporation, Taiwan Semiconductor Manufacturing Company, and Infineon Technologies AG. These market players have taken recourse to several strategies including partnership, expansion, collaboration, joint ventures, and others to prove their stand in the industry.

Covid-19 Impact on the Global GaN Power Device Market:

GaN Power Device Market Research Report offers an outline of the market based on basic parameters such as market size, sales analysis, and key drivers. The market is expected to expand on a large scale during the forecast period (2021-2024). This report includes COVID-19 impacts on the market. The unprecedented arrival of the coronavirus pandemic (COVID-19) has troubled the complete lifestyles. This in turn has affected some of the market situations along with introducing new norms. The broad view of the research report, therefore, provides the users with the total impacts of covid19 on the industry and the market players.

COVID 19 scenarios:

The increase in storage demand from data centers due to remote working boosted the growth of the market.

In addition, the supporting sectors including healthcare and medical devices, and telecommunications fuel the market growth amid COVID 19.

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GaN Power Device Market Segmentation:

Based on product, the GaN power modules segment contributed to nearly half of the total market revenue in 2019, and is anticipated to rule the roost by the end of 2027. Whereas, the GaN power ICs segment is projected to manifest the fastest CAGR of 38.6% throughout the forecast period.

Based on end user, the IT and telecommunication segment accounted for around one-third of the global market share in 2019, and is expected to dominate during the study period. At the same time, the automotive segment would portray the fastest CAGR of 38.7% through 2027.

GaN Power Device Market Geographical Analysis:

The report also provides a regional analysis of the market along with the competitive setting in each region. The research report encompasses regions including North America (the United States, Canada, and Mexico), Europe (Germany, France, UK, Russia, and Italy), Asia-Pacific (China, Japan, Korea, India, and Southeast Asia), South America (Brazil, Argentina, and Colombia), Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, and South Africa). These segmentations aid the market players in framing respective tactics, thus leading way to lucrative opportunities to attain their objectives.

Based on geography, North America held the lion’s share in 2019, accounting for nearly half of the total market share and is anticipated to lead the trail from 2020 to 2027. Simultaneously, Asia-pacific would showcase at the fastest CAGR of 37.5% during the period. The report also analyzes the market across Europe and LAMEA.

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Key Market Segments

By Device

GaN Power Discrete Devices
GaN Power ICs
GaN Power Module

By Application

Consumer Electronics
IT & Telecommunication
Automotive
Aerospace & Defense
Others

By Region

North America
U.S.
Canada
Mexico
Europe
UK
Germany
France
Rest of Europe
Asia-Pacific
China
Japan
Taiwan
South Korea
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa

CHAPTER 1:INTRODUCTION

1.1.Report description
1.2.Key benefits for stakeholders
1.3.Key market segments
1.4.Research methodology

1.4.1.Primary research
1.4.2.Secondary research
1.4.3.Analyst tools and models

CHAPTER 2:EXECUTIVE SUMMARY

2.1.Key findings

2.1.1.Top impacting factors
2.1.2.Top investment pockets

2.2.CXO perspective

CHAPTER 3:MARKET OVERVIEW

3.1.Market definition and scope
3.2.Key forces shaping GaN power device market
3.3.Market dynamICs

3.3.1.Drivers

3.3.1.1.Decrease in prices of GaN devices
3.3.1.2.Rise in demand for GaN devices for wireless charging
3.3.1.3.Increase in adoption of GaN devices in electric vehicle
3.3.1.4.Increase in requirement of GaN devices for commercial RF applications

3.3.2.Restraint

3.3.2.1.Lack of availability of GaN material

3.3.3.Opportunities

3.3.3.1.Government initiatives in HVDC and smart grid

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