GaN Semiconductors Devices Market 2021 Analysis by Global Manufacturers – NTT Advanced Technology Corporation, GaN Systems Inc., Texas Instruments, Fujitsu Semiconductor, Broadcom Inc., Toshiba Corporation, Cree Inc., NXP Semiconductors N.V., Qorvo Inc.

GaN Semiconductors Devices Market Report 2021 provides detailed analysis of Growth Factors of the market as well as gives an analysis of the Market size, Latest trends, SWOT Analysis by Regions and Forecasted market research data until 2027. The GaN Semiconductors Devices market report has studied key opportunities in the market and influencing factor which is useful to the business. The report also maps the qualitative and quantitative impact of various market factors like macro-economic indicators, PPP, Epidemiological data, Insurance scenario and patent and IP information, Government Policies and business regulations along market attractiveness as per segments.

Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) have been an integral part of the everyday modern world that helps convert energy to power. However, we are reaching the theoretical limit on how much silicon MOSFETs can be improved, how power-efficient they can be. With increasing power density and efficiency requirements and environmental pollution regulations trends, silicon is failing to meet these modern demands. Gallium nitride is on the rise to replace silicon as the backbone of power switching technology as it can meet the growing needs with better power systems efficiency, performance and system cost.

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The report presents the market competitive landscape and a corresponding detailed analysis of the major vendor/key players in the market. Top Companies in the Global The: NTT Advanced Technology Corporation, GaN Systems Inc., Texas Instruments, Fujitsu Semiconductor, Broadcom Inc., Toshiba Corporation, Cree Inc., NXP Semiconductors N.V., Qorvo Inc., Efficient Power Conversion Corporation, OSRAM GmbH, Panasonic Corporation, Infineon Technologies AG, Wolfspeed Inc. (A CREE Company)

Industry News and Updates:

Pi Innovo and GaN Systems Collaborate to Exploit the Advantages of Gallium Nitride Semiconductors

A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles.

Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon devices, while offering vastly superior performance. Based on GaN Systems’ breakthrough technology, these gallium nitride devices use low cost GaN-on-silicon base wafers. The company manufactures a range of gallium nitride high power transistors for automotive, consumer, datacenter, industrial and solar/wind/smart grid applications. Featuring exceptionally low on-resistance and negligible charge storage, these devices enable switching efficiencies well in excess of current silicon-based solutions, and offer dramatic benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction.

Pi Innovo has designed and implemented custom motor control electronics to take advantage of the benefits of GaN Systems semiconductors in applications with a wide range of input voltages from 12V to 300V. This controller design provides a functional starting-point for the development of 48V and above, high-speed motor-driven vehicle systems, and adds to a growing portion of Pi Innovo’s business providing custom electronics solutions across multiple markets.

TI introduces industry's first automotive GaN FET with integrated driver, protection and active power management

DALLAS, Nov. 9, 2020 -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99% efficiency and reduce the size of power magnetics by 59% compared to existing solutions. TI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC).

Vehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance. Using TI’s new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions – enabling engineers to achieve extended battery range, increased system reliability and lower design cost. In industrial designs, the new devices enable high efficiency and power density in AC/DC power-delivery applications where low losses and reduced board space are important – such as hyperscale and enterprise computing platforms as well as 5G telecom rectifiers.

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GaN Systems Leads the Power Electronics Revolution at APEC 2020

OTTAWA, Feb. 25, 2020 -- GaN Systems, the global leader in GaN power semiconductors, will showcase how its leading GaN transistors are a cornerstone technology for power electronics equipment.  New transistor products and power modules, reference designs and tools, and customer demonstrations in consumer electronics, industrial, and automotive industries will be on display at the Applied Power Electronics Conference (APEC) Booth 1147 in New Orleans, Louisiana, USA on March 15 to March 19, 2020.

Market Segmentation by Types

Transistor
Diodes
Rectifiers

Market Segmentation by Applications

Consumer Electronics
Automotive
Aerospace
Defense

With tables and figures helping analyze worldwide Global GaN Semiconductors Devices Industry, this research provides key statistics on the state of the industry and is a valuable source of guidance and direction for companies and individuals interested in the Industry.    

Regional Analysis:

Furthermore, to broaden the understanding, researchers have studied the global The from a geographical point of view, considering the potential regions and countries. The regional analysis will assist the market players in making sound decisions regarding their future investments.

The Report includes the following geographic areas such as North America, Europe, China, Japan, Southeast Asia, India and ROW.

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What Are The Market Factors That Are Explained In The Report?

Key Strategic Developments: The study also includes the key strategic developments of the market, comprising R&D, new product launch, M&A, agreements, collaborations, partnerships, joint ventures, and regional growth of the leading competitors operating in the market on a global and regional scale.

Analytical Tools: The Global GaN Semiconductors Devices Market Report include the accurately studied and assessed data of the key industry players and their scope in the market by means of a number of analytical tools. The analytical tools such as Porter’s five forces analysis, SWOT analysis, feasibility study, and investment return analysis have been used to analyze the growth of the key players operating in the market.

Key Market Features: The report evaluated key market features, including revenue, price, capacity, capacity utilization rate, gross, production, production rate, consumption, import/export, supply/demand, cost, market share, CAGR, and gross margin. In addition, the study offers a comprehensive study of the key market dynamics and their latest trends, along with pertinent market segments and sub-segments.

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