Gallium Oxide Market 2021 Global Insights and Business Scenario – AGC Inc., Strem Chemicals, Inc., ALB Materials Inc., American Elements, FLOSFIA Inc., Alfa Aesar, ProChem, Inc., Materion Corporation

The Gallium Oxide Market report is a compilation of first-hand information, qualitative and quantitative assessment by industry analysts, inputs from industry experts and industry participants across the value chain. The report provides an in-depth analysis of parent market trends, macro-economic indicators and governing factors along with market attractiveness as per segments. The report also maps the qualitative impact of various market factors on market segments and geographies. We analyzed the impact of COVID-19 (Corona Virus) on the product industry chain based on the upstream and downstream markets, on various regions and major countries and on the future development of the industry are pointed out.

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The 133 pages report presents the market competitive landscape and a corresponding detailed analysis of the major vendor/key players in the market. Top Companies in the Global Gallium Oxide Market: AGC Inc., Strem Chemicals, Inc., ALB Materials Inc., American Elements, FLOSFIA Inc., Alfa Aesar, ProChem, Inc., Materion Corporation, Sigma Aldrich Corporation, Novel Crystal Technology, Inc.and others.

AGC Invests in Next-generation Power Semiconductor Material Developer Novel Crystal Technology

March 22, 2018: AGC Asahi Glass (AGC), a world-leading manufacturer of glass, chemicals and high-tech materials, has decided to invest in Novel Crystal Technology (Novel Crystal Technology, Inc.; Headquarters: Saitama prefecture, Japan; President: Akito Kuramata), a company engaged in developing a next-generation semiconductor material. This investment will pursue the joint development of gallium oxide wafers for use in next-generation power semiconductors, aiming for commercialization in 2020.

Power semiconductors, which are found in a wide range of electric devices such as servers, home appliances, trains, and manufacturing facilities, function to control voltage and current to achieve reduced power consumption. In step with the ever-expanding popularity of electric vehicles and renewable energy, the demand for such semiconductors is expected to double current demand by 2030*1. The performance expected from power semiconductors rises by the day, and there is a need to shift from the silicon wafer used as today's power semiconductor material, to a material that can be used with high voltages and exhibit less power loss even at higher currents.

Compared to SiC (silicon carbide) and GaN (gallium nitride), both of which are being developed as next-generation power semiconductor materials, gallium oxide has intrinsic characteristics that allow it to be used under higher voltages and currents, and this material has excellent potential for mass production. Gallium oxide is garnering significant attention as a material for next-generation power semiconductors, and as such is expected to mature into a market of around 20 billion Japanese yen by 2030

Buffalo reports gallium oxide transistor with breakdown exceeding 8kV

3 June 2020: In research supported by the US Air Force Office of Scientific Research and by the US National Science Foundation (NSF), researchers in the University of Buffalo’s Department of Electrical Engineering have developed a gallium oxide (β-Ga2O3) metal-oxide-semiconductor field-effect transistor that can handle voltages of more than 8000V (Shivam Sharma et al, ‘Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage’, IEEE Electron Device Letters, vol41, issue6 (June 2020), p836).

Associate professor Uttam Singisetti (senior author of the paper) and students in his lab have been studying the potential of gallium oxide, including previous work exploring transistors made from the material.

Gallium oxide has an ultrawide bandgap energy of about 4.8eV. This exceeds that of the incumbent power electronics material silicon (1.1eV) as well as its potential replacements including silicon carbide (about 3.4eV) and gallium nitride (about 3.3eV). Systems made with wide-bandgap materials can be thinner, lighter and handle more power than systems made of materials with narrower bandgaps.

A key innovation in the new transistor revolves around the passivation process (i.e. coating the device to reduce the chemical reactivity of its surface), for which a layer of SU-8 epoxy-based polymer was added.

Global Gallium Oxide Market Split By Product Type And Applications:

This report segments the global Gallium Oxide market on the basis of Types is:

Chemical Synthesis

    Thermal Vaporization and Sublimation

    Chemical Vapour Deposition

    Molecular Beam Epitaxy

    Others

On the basis of Application, the Global Gallium Oxide market is segmented into:

Electroluminescent Devices

    Gas sensors

    Power and High Voltage Devices

    Others

The research study evaluates the overall size of the market, by making use of a bottom-up approach, wherein data for different industry verticals, and end-user industries and its applications across various product types have been recorded and predicted during the forecast period. These segments and sub-segments have been documented from the industry specialists and professionals, as well as company representatives, and are outwardly validated by analyzing previous years’ data of these segments and sub-segments for getting an accurate and complete market size.

Influence Of The Gallium Oxide Market Report:

-Comprehensive assessment of all opportunities and risk in the Gallium Oxide market.

- Gallium Oxide market recent innovations and major events.

-A Detailed study of business strategies for growth of the Gallium Oxide market-leading players.

-Conclusive study about the growth plot of Gallium Oxide market for forthcoming years.

-In-depth understanding of Gallium Oxide market-particular drivers, constraints and major micro markets.

-Favorable impression inside vital technological and market latest trends striking the Gallium Oxide market.

The report has 150 tables and figures browse the report description and TOC:

https://www.marketinsightsreports.com/reports/01122521274/global-gallium-oxide-market-growth-2020-2025?Mode=12                                            

What Are The Market Factors That Are Explained In The Report?

Key Strategic Developments: The study also includes the key strategic developments of the market, comprising R&D, new product launch, M&A, agreements, collaborations, partnerships, joint ventures, and regional growth of the leading competitors operating in the market on a global and regional scale.

Analytical Tools: The Global Gallium Oxide Market Report includes the accurately studied and assessed data of the key industry players and their scope in the market by means of a number of analytical tools. The analytical tools such as Porter’s five forces analysis, SWOT analysis, feasibility study, and investment return analysis have been used to analyze the growth of the key players operating in the market.

Key Market Features: The report evaluated key market features, including revenue, price, capacity, capacity utilization rate, gross, production, production rate, consumption, import/export, supply/demand, cost, market share, CAGR, and gross margin. In addition, the study offers a comprehensive study of the key market dynamics and their latest trends, along with pertinent market segments and sub-segments.

Customization of the Report: This report can be customized as per your needs for additional data up to 3 companies or countries or 40 analyst hours.

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