Press release
GaN Power Device Market to Improve Rapidly; Booming Aviation Industry Share, Size, Growing Demand and Opportunity Analysis with Top Key Profile (2020-2026)
The growing demand for GaN RF power device in the aerospace industry is expected to enable speedy expansion of the market, states Fortune Business Insights in a report, titled “GaN Power Device Market Size, Share & Industry Analysis, By Type (GaN Power Discrete Devices, GaN Power ICs, GaN Power Modules), By Voltage Range (Low Voltage (Below 200 Volt), Medium Voltage (200–600 Volt), High Voltage (Above 600 Volt)), By Application (Power Drives, Supply, and Inverter, Radio Frequency), By End User (Commercial, Military) and Regional Forecast, 2019-2026.” The surge in aircraft deliveries is expected to bolster the healthy growth of the market during the forecast period.The coronavirus emergency has financially drained various industries and sectors around the globe. The governments of several countries have instigated lockdown to thwart the spread of this deadly virus. Such plans have caused disturbances in the production and supply chain. But, with time and resolution, we will be able to combat this stern time and get back to normality. Our well-revised reports will help companies to receive in-depth information about the present scenario of every market so that you can adopt the necessary strategies accordingly.
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The report GaN RF power device market includes:
• Well-analyzed report of the market
• Key insights into the market
• Dominant regions in the world
• Foremost market drivers and restraints
• Competitive landscape
Market Driver:
Increasing Application of GaN in 5G network to Boost Market
The increasing utilization of GaN power devices in wireless chargers is expected to create new business opportunities in the global market. The growing awareness about the benefits of GaN power device such as improved fuel efficiency and reduced switching losses. The production of high-end jets and aircraft is expected to promote the healthy growth of the market. The increased air traffic is expected to contribute positively to the growth of the market. Moreover, the increasing application of GaN in the 5G network is expected to boost the market. The introduction of advanced GaN power transistors by major companies is predicted to incite the development of the market in the forthcoming years. For instance, in 2018, Panasonic Corporation, a major Japanese multinational electronics company announced the launch of a newly designed Insulated-Gate GaN Power Transistor that can perform stable operations with removed threshold voltage variation. The ongoing technological innovation by key players is expected to have a tremendous impact on the global market in the near future.
Nevertheless, the growing cognizance about Si-based power devices and its efficiencies can hamper the growth of the market. Additionally, the lack of availability of GaN Material is expected to restrict the growth of the market.
Regional Analysis:
Heavy Demand from the Defense Sector to Aid Growth in North America
Geographically, the GaN power device market is categorized into North America, Europe, Asia Pacific, and the rest of the world. The market in North America is expected to witness a rapid growth rate during the forecast period owing to the presence of major manufacturers in the U.S. The increasing investment in R&D is expected to spur opportunities for the market. The growing demand from the defense is expected to propel the speedy expansion of the market. The market in Asia Pacific is expected to rise tremendously during the forecast period owing to the high adoption of GaN power devices across various industries such as defense, aerospace, automotive, military, and telecommunication in emerging economies such as India and China. The rising investments in R&D and military up-gradation programs are expected to offer impetus to the market in Asia Pacific.
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Key Development:
2019: Panasonic Corporation revealed its newly developed GaN and Si-based power device at the Applied Power Electronics Conference and Exposition (APEC). Panasonic 600V X-GaN power transistor offers high heat capacity, thermal conductivity, and enhanced 600 V breakdown mode.
2017: MACOM Technology Solutions launched its newly developed GaN [power device for pulsed L-Band radar systems that used for airport surveillance radar (ASR) applications
The Report Lists the Main Companies in the GaN Power Device Market:
• Microsemi Corporation (The U.S.)
• Analog Devices, Inc. (The U.S.)
• Cree, Inc. (The U.S.)
• Qorvo, Inc. (The U.S.)
• MACOM Technology Solutions (The U.S.)
• Efficient Power Conversion Corporation (The U.S.)
• Integra Technologies, Inc. (The U.S.)
• Transphorm Inc. (The U.S.)
• Navitas Semiconductor Inc. (The U.S.)
• NXP Semiconductors N.V. (The Netherland)
Segmentation by Geographic:-
• North America (U.S. and Canada)
• Europe (U.K. Germany, France, Russia, and Rest of Europe)
• Asia Pacific (China, India, Japan, South Korea, Australia, and Rest of Asia Pacific)
• Rest of the Word (South America and Middle East & Africa)
Browse Detailed Summary of Research Report With TOC:
https://www.fortunebusinessinsights.com/gallium-nitride-gan-power-device-market-102599
Key Topics Covered In Table Of Content (TOC):-
• Introduction
• Executive Summary
• Market Dynamics
• Key Insights
• Global GaN Power Device Market Analysis, Insights and Forecast, 2016-2027
• Europe GaN Power Device Market Analysis, Insights and Forecast, 2016-2027
• Asia Pacific GaN Power Device Market Analysis, Insights and Forecast, 2016-2027
• Rest of the World GaN Power Device Market Analysis, Insights and Forecast, 2016-2027
• Competitive Analysis
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