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GaN Semiconductor Device Market 2020 Global Industry Revenue by Growth Rate ,Top Key Players and forecast till 2025 : Toshiba, Panasonic, Cree, GaN Systems, Infineon Technologies

08-12-2020 02:12 PM CET | Industry, Real Estate & Construction

Press release from: Market Intelligence Data

GaN Semiconductor Device

GaN Semiconductor Device

MarketIntelligenceData has recently published a research report titled, Global GaN Semiconductor Device Market. Primary and secondary research methodologies have been used to formulate this report. The analysis has been derived using historic and forecast. The report includes in-depth examination of geographical regions, revenue forecasts, segmentation, and market share.

The Global GaN Semiconductor Device market is expected to thrive in terms of volume and value during the forecast years. This report offers an understanding of various drivers, threats, opportunities, and restraints in the market. Analysts have used SWOT and Porter’s five forces analysis to determine the effect these factors will have on the market growth during the forecast period.

Get a Sample Copy of the Report:
https://www.marketintelligencedata.com/reports/59031/global-gan-semiconductor-device-market-research-report-2020/inquiry?Mode=88

The GaN semiconductor devices market valued at USD 977.21 million in 2019, and is expected to reach USD 2534.61 million by 2025, registering a CAGR of 17.21% over the forecast period of 2020-2025.

Top Companies operating in the Global GaN Semiconductor Device market profiled in the report : Toshiba, Panasonic, Cree, GaN Systems, Infineon Technologies, OSRAM, Efficient Power Conversion, NXP Semiconductors, Texas Instruments, NTT Advanced Technology.

Growing demand for radio frequency in the semiconductor market, and a prospering consumer electronics industry, particularly in LED-based lighting and displays and rise in electric vehicles, power delivery, and photovoltaic inverters are some of the major market driving factors for the GaN semiconductor devices market.The various benefits of GaN, such as its cost-effective nature and elimination of cooling requirements have propelled its reach as compared to its contemporaries like silicon and gallium arsenide. The increasing adoption is also reinforced by the increase in demand for energy-efficient semiconductor devices in recent years.Increasing demand for smartphones, gaming devices, laptops, and TVs is expected to drive the GaN semiconductor devices market in the consumer electronics sector.

Global Industry News:
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications

Toshiba America Electronic Components today announced the addition of a 200W C-Band gallium nitride semiconductor High Electron Mobility Transistor to its power amplifier product family. The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.

The 200W TGI5254-200P is Toshiba's first commercial C-Band GaN HEMT that is optimized for pulse operation to support C-Band RADAR applications. The new device operates in the 5.2 GHz1 to 5.4 GHz range. RF performance specifications include output power of 53.0dBm (typ.) with 43dBm input power, power gain of 10.0dB2 (typ.) and drain current of 2.4Amps2 (typ.) with pulse width of 200 µsec (nom.) and duty ratio of 10 percent (nom.) . This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.

Global GaN Semiconductor Device Market Split by Product Type and Applications:
Market Segment by Type, covers:
Power Semiconductors
Opto Semiconductors
RF Semiconductors

Market Segment by Applications, covers:
Automotive
Consumer Electronics
Aerospace & Defense
Healthcare
Information & Communication Technology

Regional Analysis For GaN Semiconductor Device Market:
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Colombia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

Browse Full Report
https://www.marketintelligencedata.com/reports/59031/global-gan-semiconductor-device-market-research-report-2020?Mode=88

Influence of the GaN Semiconductor Device Market Report:
-Comprehensive assessment of all opportunities and risk in the GaN Semiconductor Device market.
-GaN Semiconductor Device market recent innovations and major events.
-Detailed study of business strategies for growth of the GaN Semiconductor Device market-leading players.
-Conclusive study about the growth plot of GaN Semiconductor Device market for forthcoming years.
-In-depth understanding of GaN Semiconductor Device market-particular drivers, constraints and major micro markets.
-Favourable impression inside vital technological and market latest trends striking the GaN Semiconductor Device market.

Note-All the reports that we list have been tracking the impact of COVID-19 the market. Both upstream and downstream of the entire supply chain has been accounted for while doing this. Also, where possible, we will provide an additional COVID-19 update supplement/report to the report in Q3, please check for with the sales team.

Contact Us:
Irfan Tamboli (Head of Sales) – Market Intelligence Data
Phone: + 1704 266 3234 | +91-20-412 512 12
sales@marketintelligencedata.com

ABOUT US:
MarketIntelligenceData provides syndicated market research on industry verticals including Healthcare, Information and Communication Technology (ICT), Technology and Media, Chemicals, Materials, Energy, Heavy Industry, etc. MarketIntelligenceData provides global and regional market intelligence coverage, a 360-degree market view which includes statistical forecasts, competitive landscape, detailed segmentation, key trends, and strategic recommendations

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