RF GaN Semiconductor Device Market Report Perceives A Fabulous Growth Prospects; Unleashed Market Insights Till 2025 (SARS-CoV-2, Covid-19 Analysis)

RF GaN Semiconductor Device Market

Market Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period. The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.

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Drivers and Restraints

The past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape. Demand for RF amplifiers with a higher rate of data transmission, higher frequency, and power has led to the expansion in GaN RF device technology. The numerous factors attributing to the growth of global RF GaN market are growing adoption of RF GaN power mechanisms for energy & power applications and increase in demand for IT & telecommunication equipment that employ RF GaN power devices. moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period. The augmented demand for IT & telecommunication equipment and deployment of energy & power applications are poised to drive the market during forecast period. Developments in RF power amplifiers are projected to create an opportunity for RF GaN market. On the other hand, competition from silicon carbide (SiC) devices is expected to hinder the market during forecast period.

GaN Success or Advantages

It takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues. More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.

With this, there is much more to the role of RF GaN device than this. The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.

At most, the factors define the top-tier concerns of GaN devices and its advantages—

The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop. The gate-source voltage for an improved GaN device is 6V, and this simplifies the challenge of generating the needed turn-on and turn-off voltages and electric. The gate voltage is also lower than it is for most power MOSFETs and has a lower negative temperature coefficient, which also simplifies driver-compensation issues.

GaN is also known for being used for LEDs, power electronics, and RF. While GaN-based power semiconductors are rising high, the RF version of GaN is also taking off. As per the research, in 2018, sales of RF GaN-enabled devices grew by 22%. By 2023, the RF GaN device market will surpass $1.7 billion, according to the firm. For these years, RF GaN was a niche-oriented technology used in the military/aerospace community, especially for radar.

Segmentation

The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.

Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.

Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others. The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.

Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others. The aerospace & defense segment is the most significant contributor to the market due to increasing investments by the military and defense industries. RF GaN power devices are used in military and defense industry due to its reduced size and weight. Additionally, its ability to enhance the overall efficiency of the systems and reduce power consumption are some of the factors contributing to the growth of the market

Based on application, the global RF GaN semiconductor device market has been segmented into manufacturing, oil & gas, chemicals, pharmaceuticals, energy & power, automotive, food & beverages, aerospace and defense, and others. The manufacturing industry held the largest market share in the application segment in 2018 and is expected to register a significant CAGR during the forecast period. The increasing automation in factories has increased the usage of various sensors to gather accurate information associated with the production and other facilities within the factory premise.

Competitive Analysis

The major market players operating in the global market as identified by Analog Devices Inc. (US), NXP Semiconductors NV (Netherlands), STMicroelectronics NV (Switzerland), ROHM Semiconductors (Japan), Toshiba Corporation (Japan), Aethercomm Inc. (US), Cree Inc. (US), among others.

More Information@

https://www.marketresearchfuture.com/reports/rf-gan-semiconductor-device-market-8664

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This release was published on openPR.