Why the GaN and SiC Power Semiconductor Market Is Set To Explode? | Global Players are Alpha & Omega Semiconductor, Diodes Incorporated, Fuji Electric Corp. of America, Littelfuse, Microsemi Corporation, Mitsubishi Electric Automation, Inc., Nexperia, On

In terms of geographical expansion, GaN and SiC power semiconductor market outlook is gradually changing in the developing countries of the Asia Pacific region such as India and China. The presence of large solar facilities is the most significant factor that has increased product demand in these nations. To put things into perspective, China has more solar energy capacity - a humongous 130 gigawatts - than any other nation in the world. It is home to the largest solar facility in the world - the solar plant in its Tengger Desert with a capacity of more than 1,500 megawatts. Moreover, China has many sizeable solar farms including the massive 850-megawatt Longyangxia Dam facility on the Tibetan Plateau.

India is also witnessing exponential increase in demand and supply of renewable energy. Proactive government initiatives and policy support to develop and deploy solar energy facilities makes it one of the world's largest green energy markets. After allowing 100 percent FDI in solar energy plants, the government of India is now aiming to surpass the set target of 175 gigawatts of renewable energy capacity by 2022.

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When compared to conventional silicon-based semiconductor devices, GaN and SiC semiconductor materials can be utilized in smaller, faster and more reliable energy systems that can increase their effectiveness and productivity. In fact, these semiconductors can reduce approximately 90 percent of the energy losses during power conversion. Taking into account these unique abilities, several automation firms are also incorporating GaN and SiC power semiconductor in various industry applications.

Driven by the increasing need of power saving devices in heavy energy applications, GaN and SiC power semiconductor market has emerged as one of the lucrative business avenues for the players in electronics and media sector. In fact, over the last few years, semiconductor manufacturers have been observing fierce competition pertaining to the development of GaN and SiC power devices. The growing use of such devices in renewable energy generation applications will have a notable impact on the future product demand.

As compared to traditional silicon-based semiconductor devices, GaN and SiC semiconductor materials can be used in faster, smaller, and more reliable devices that can provide higher efficiency. During power conversion, they eliminate around 90% of the power losses. So that to take advantage of their unique capabilities, several automation companies like ABB have been incorporating GaN and SiC power semiconductor in their industry applications.

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Though the GaN and Sic power semiconductor has the capability to withstand higher operational temperature, leading contributors in semiconductor market have been involved in the development of insulating substrates which can be used in electronic devices for heat dissipation. Continuous upgradation of existing technology trends in the semiconductor industry is likely to propel GaN and SiC power semiconductor market share.

NXP Semiconductors, ROHM Semiconductor, Infineon Technologies AG, and Mitsubishi Electric Corporation are some of the mainstream firms constituting the competitive hierarchy of the GaN and SiC power semiconductor market. Reports forecast that the remuneration scale of GaN and SiC power semiconductor market is likely to surpass USD 3 billion by 2025.

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