Gallium Nitride Market Focuses on Global Industry Analysis, Size, Share, Trends with Top Leading Companies - Infineon Technologies Ag, IQE plc, Koninklijke Philips N.V., GaN systems, ON Semiconductor

The global gallium nitride market is segmented on the basis of type, end-use industry, and region. Based on the type, the market is further segmented into p-type and n-type. The end use industry is segregated into automotive, consumer electronics, defense and aerospace, healthcare, information and communication technology, and others. Geographically, the market is segmented into Asia Pacific, Europe, Latin America, North America, and the Middle East & Africa.

Competitive Dashboard:

Some of the prominent players in the global GaN market are Cree Inc. (the U.S), GaN systems (Canada), FUJITSU (Japan), Efficient Power Conversion Corporation (the U.S), IQE plc (U.K), Koninklijke Philips N.V. (the Netherlands), Infineon Technologies Ag (Germany), Mitsubishi Chemical Corporation (Japan), ON Semiconductor (the U.S), Taiwan Semiconductor Manufacturing Company (Taiwan), Panasonic Corporation (Japan), Texas Instruments Incorporated (the U.S), TOSHIBA CORPORATION (Japan), VisIC (Israel), and Nippon Telegraph and Telephone Corporation (Japan).

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Gallium Nitride Market Synopsis:

Gallium nitride is majorly used in the production of semiconductors, LEDs, and RF devices. GaN is widely accepted as green technology across most of the industries due to the properties such as high thermal stability, low power consumption, temperature resistance, and high voltage breakdown. Additionally, the GaN devices are smaller in sizes and lighter in weight, which further drives the market growth. The unique properties of GaN and its low cost over silicon have been the major driver of the global market and is expected to continue growing in the near future.

The major applications of GaN devices in the end-user industries such as automotive, consumer electronics, defense and aerospace, and others are the drivers of the market growth. However, the demand for the lightweight automotive with improved efficiency consumes a significant amount of GaN. Furthermore, the consumer electronics industries favor the market growth due to the increased use of GaN in smartphones, laptops, television, and others. GaN LEDs are a threat to conventional lights owing to their power efficiency, energy consumption, luminosity coupled with environmental concerns. However, limited availability of gallium nitride may hinder the market growth during the review period 2017-2023.

Detailed Regional Insights:

The gallium nitride market is segmented into five key regions: Asia Pacific, Europe, Latin America, North America, and the Middle East & Africa.

North America is leading the global GaN market followed by Europe and rest of the world. Countries like the U.S. and Canada contribute majorly to the market growth owing to the fast-paced and sophisticated lifestyle. The increasing demand for LEDs in consumer goods such as television, computers, laptops, and gaming devices has propelled the market growth to some extent.

Europe is also expected to witness the strong market growth of GaN devices in the forecast period. GaN is identified as ‘key enabling technology’ by the European Space Agency (ESA) for space and founded GREAT2 (GaN reliability enhancement and technology transfer) for technological innovations.

Asia Pacific is expected to emerge as the fastest growing market for gallium nitride due to the growing demand for efficient, high performance, cheap RF electronics, and availability of raw material suppliers. Countries such as China, India, and Japan have high sales and revenue, which, in turn, increase the market growth. South Korea, Taiwan, and Australia also consume a significant amount of GaN owing to the growing end-user industries in this region.

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Intended Audience

Gallium nitride Manufacturers
Traders and distributors of gallium nitride
Research and development institutes
Potential investors
Raw material suppliers
Nationalized laboratory

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This release was published on openPR.