Global GaN Power Devices Market Challenges, Risks, Entry Barriers, Sales channels, Distributors and Future Forecast to 2018-2025|key Player: Power, GaN Power Devices Market, Fujitsu, Toshiba, Koninklijke Philips, RF Micro Devices, Mitsubishi Chemical

Market Research Hub (MRH) has recently broadcasted a new study to its broad research portfolio, which is titled as “Global GaN Power Devices Market Insights, Forecast to 2025” provides an in-depth analysis of the GaN Power Devices Market with the forecast of market size and growth. The analysis includes addressable market, market by volume, market share by business type and by segment (external and in-house).The research study examines the GaN Power Devices Market on the basis of a number of criteria, such as the product type, application, and its geographical presence.

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This report presents the worldwide GaN Power Devices market size (value, production and consumption), splits the breakdown (data status 2013-2018 and forecast to 2025), by manufacturers, region, type and application.
This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.

GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.
The GaN Power Devices market was valued at xx Million US$ in 2017 and is projected to reach xx Million US$ by 2025, at a CAGR of xx% during the forecast period. In this study, 2017 has been considered as the base year and 2018 to 2025 as the forecast period to estimate the market size for GaN Power Devices.

The following manufacturers are covered in this report:
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors

GaN Power Devices Breakdown Data by Type
600V
Other
GaN Power Devices Breakdown Data by Application
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices

GaN Power Devices Production by Region
United States
Europe
China
Japan
Other Regions

GaN Power Devices Consumption by Region
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Malaysia
Philippines
Thailand
Vietnam
Europe
Germany
France
UK
Italy
Russia
Rest of Europe
Central & South America
Brazil
Rest of South America
Middle East & Africa
GCC Countries
Turkey
Egypt
South Africa
Rest of Middle East & Africa

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Table of Contents
1 Study Coverage
1.1 GaN Power Devices Product
1.2 Key Market Segments in This Study
1.3 Key Manufacturers Covered
1.4 Market by Type
1.4.1 Global GaN Power Devices Market Size Growth Rate by Type
1.4.2 600V
1.4.3 Other
1.5 Market by Application
1.5.1 Global GaN Power Devices Market Size Growth Rate by Application
1.5.2 Server and Other IT Equipments
1.5.3 High-efficiency and Stable Power Supplies
1.5.4 Rapidly Expanding HEV/EV Devices
1.6 Study Objectives
1.7 Years Considered

2 Executive Summary
2.1 Global GaN Power Devices Market Size
2.1.1 Global GaN Power Devices Revenue 2013-2025
2.1.2 Global GaN Power Devices Production 2013-2025
2.2 GaN Power Devices Growth Rate (CAGR) 2018-2025
2.3 Analysis of Competitive Landscape
2.3.1 Manufacturers Market Concentration Ratio (CR5 and HHI)
2.3.2 Key GaN Power Devices Manufacturers
2.3.2.1 GaN Power Devices Manufacturing Base Distribution, Headquarters
2.3.2.2 Manufacturers GaN Power Devices Product Offered
2.3.2.3 Date of Manufacturers Enter into GaN Power Devices Market
2.4 Key Trends for GaN Power Devices Markets & Products

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