GaN RF Semiconductor Devices Market | Grow at USD 1250.9 Million by 2023 with 22.27% of CAGR along with GAN Systems, Infineon Technologies, NXP Semiconductor, Qorvo, Wolfspeed, Ampleon Netherlands B.V

The global GaN RF semiconductor devices market was valued at USD 377.5 million in 2017, and is expected to reach a value of USD 1250.9 million by 2023, at a CAGR of 22.27 %, during the forecast period (2018 - 2023). The regions considered in the scope of the report include North America, Europe, Asia Pacific, Latin America, and Middle East & Africa.

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Owing to the growth of Internet of Things (IoT), advent of 5G network and widespread applications across industry verticals are expected to offer immense growth opportunities to the RF GaN semiconductors market. The successful implementation of IoT, needs data transfer over a network without human-to-computer interaction. The increasing implementation of IoT will result in signal congestion and will demand the use of GaN technology that can amplify power, capacity, and the bandwidth required for communicating with all interconnected devices. Development of MEMS techno are an integral part of IoT devices, and will also have a positive impact on the GaN RF semiconductor devices market. However, competition from SiC remains a threat to the market growth.

Key Developments in the Market

February 2018 - MACOM Technology Solutions and STMicroelectronics partnered to develop GaN (Gallium Nitride) on Silicon wafers to be manufactured by ST for MACOM’s use across an array of RF applications. While expanding MACOM’s source of supply, the agreement also grants to ST the right to manufacture and sell its own GaN on Silicon products in RF markets outside of mobile phone, wireless basestation and related commercial telecom infrastructure applications
May 2017 - Ampleon participated in International Microwave Symposium, IMS and exhibited its latest RF Power devices and modules suitable for use in mobile broadband, broadcast, industrial, radar and avionics, and RF energy applications. Product demonstrations for mobile broadband included several power amplifiers for base station, small-cell and massive-MIMO applications using Ampleon’s 32V and 50V LDMOS and GaN processes, as well as a multiband power amplifier

Major Players:

GAN Systems, Infineon Technologies, NXP Semiconductor, Qorvo Inc., Wolfspeed Inc., Ampleon Netherlands B.V., Avago Technologies and Efficient Power Conversion, amongst others.

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Proliferation of Long Term Evolution Wireless Networks to Drive the Market Growth

Rise in Long Term Evolution (LTE) Wireless Networks is one of the primary growth factors for the GaN RF semiconductor devices market. The constantly increasing data consumption has resulted in the growth of commercial networks and will induce network carriers to adopt next-generation LTE networks, such as 4G and 5G. Due to its ability to provide higher frequency data bandwidth connections, GaN RF technology will soon be the ideal choice for network service providers. GaN RF devices help in ensuring that the device can generate maximum frequency at the necessary band, and also prevent any interference from other frequency bands. The deployment of GaN RF power devices will allow LTE devices to offer speeds that allow consumers to upload and download content, such as music and photographs, and also play online games and watch online TV shows on maximum frequency bands, which will lead to a rise in their adoption.

Defense Industry to Account for A Significant Share

The defense market has been the major driving force for GaN devices development in the past decades. With the rise in worldwide defense spending, RF GaN devices have witnessed increase in adoption in the defense sector. These devices have been implemented in new generation aerial and ground radars. Their high power capability improves detection range and resolution, and designers are becoming increasingly familiar with this new technology. Furthermore, with the increase in worldwide defense spending, the defense applications are expected to witness a significant CAGR.

North America is Expected to Hold the Largest Share in the Market

The growth in GaN semiconductors market in North America strongly correlates with the growth of end-user industries, such as telecom, aerospace & defence, and consumer electronics. Moreover, presence of leading players in the industry, also contributes to the share held by the region. The growth in North America is encouraged by propelling defense sector with wider utilization of GaN-based transistors, military radar and electronic warfare in military applications. The US is the highest spender on the defense budget in the world, and is expected to spend USD 640 billion in military and defense in 2018. With Canada expected to follow this trend and increase its defense expenditure, the demand for RF GaN semiconductor devices in defense is expected to drive the market in the region. Also, rising demand from consumer electronic products, such as televisions, laptops, gaming devices, personal computers, and tablet PCs has further fuelled the growth of this market in North America. Moreover, expertise in technology has resulted in the growth of convertible laptops, ultra HD or 4K Television sets, and other various wireless electronics, increasing the demand for RF GaN semiconductor in the consumer electronics market of the region.

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