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Magneto Resistive Ram Market – Actionable Insights and Recommendation 2017 - 2025
Magneto Resistive RAM is the result of an amalgamation of advantages of both dynamic RAM and static RAM. Magneto Resistive RAM adopted density feature from DRAM and high reading and writing speed from SRAM.
The global Magneto Resistive RAM market is foreseen to witness huge incremental growth as a non-volatile solid state memory and is anticipated to replace other alternatives such as EEPROM, flash memory.
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Increase in demand for wearable electronics is the major factor attributing to drive the demand for Magneto Resistive RAM in forth coming years. Also, continuous research and development in wearable consumer electronic is another factor spurring the market growth.
Owing to various physical characteristics such as easy operability in high temperature and can easily resist under high radiation are anticipated to increase the product application in aerospace and military sector.
The North American region is anticipated to capture largest market share regarding revenue owing to the presence of major players paired with the escalating research & development activities in North America region. Further, the imperative demand to cater emerging need of fast computing, enhancing scalability and lesser power consumption, is anticipated to fuel the demand for Magneto Resistive RAM.
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The Asia Pacific region is anticipated to witness the fastest-growth rate, due to the developments and advancements, in data centers infrastructures, backed by the growing penetration of internet usage and cloud computing. Also, The Asia-Pacific countries such as China & India has increased in the number of memory manufacturers, due to ease availability of raw material and cheap labor.
Some of the prominent players in the Magneto Resistive RAM market include Everspin Technologies Inc., Samsung Electronics Co. Ltd., NVE Corporation, Spin Transfer Technologies, Honeywell International Inc., Toshiba Corporation and Avalanche Technology Inc.
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