IGBT and Super Junction MOSFET Market to Reach US$10,100 Mn by 2019

Globally, the combined market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) was valued at USD 4,776.2 million in 2012 and is likely to grow at a CAGR of 11.6% during the period 2013 – 2019. The combined market for IGBT and super junction MOSFET is expected to reach USD 10,100.0 million by 2019. Increasing demand for energy efficiency, environment compatibility, flexibility, and cost and size reduction are the emerging trends across the semiconductor industry and have greatly influenced the trends in power semiconductor market. IGBT and super junction MOSFETs offer significant improvement in efficiency and better switching frequency. Further, IGBT are cost effective while super junction MOSFETs offer highly compact design. These factors are together driving the growth of the market for IGBTs and super junction MOSFETs. Asia Pacific is expected to emerge as the fastest growing regional market, followed by Europe, during the forecast period 2013 to 2019. This growth in Asia Pacific region will be led by China followed by Japan. The growing renewable energy sector, heavy investment in high-speed rail and rising demand for electric vehicles are the key factors propelling growth of the IGBT and super junction MOSFET market in the region.

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Both IGBT and super junction MOSFETs come in discrete as well as module forms. Growth of the discrete market is driven by increasing demand for consumer electronic products while modules have found significant uptake in photovoltaic inverters, and electric and hybrid electric vehicles (EV/HEV). Key application areas for IGBT and super junction MOSFETs include uninterrupted power supply (UPS), wind turbines, photovoltaic (PV) inverter, rail traction, consumer applications, electric vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial applications, converters, adapters and chargers, lighting, and others (servers, telecom and networking devices, etc.).. Super junction MOSFETs have been emerging as a more suitable power semiconductor for, converters, adapters and chargers, lighting, and other (servers, telecom and networking devices, etc.) application areas and are expected to find higher adoption in these segments as compared to IGBT over the coming years. Among all application segments for IGBT and super junction MOSFETs, industrial application was the single largest segment by revenue in 2012. The industrial application sector has seen high demand for energy efficient power semiconductor products in recent years and this has propelled the uptake of IGBT in this segment.

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Key players in this market include Mitsubishi Electric Corporation, Fairchild Semiconductor International, Inc., Infineon Technologies AG, STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd., and Semikron, Inc., among others. Mitsubishi Electric Corporation was as the market leader for IGBT in 2012. The company had significant sales in the Asian market, particularly in China and Japan. Infineon Technologies AG was the market leader in 2012 for super junction MOSFETs.

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