Global SiC & GaN Wafer Defect Inspection System Sales Analysis Report: By Region, Players, Type, Application 2026

Global Info Research's report offers an in-depth look into the current and future trends in SiC & GaN Wafer Defect Inspection System, making it an invaluable resource for businesses involved in the sector. This data will help companies make informed decisions on research and development, product design, and marketing strategies. It also provides insights into SiC & GaN Wafer Defect Inspection System' cost structure, raw material sources, and production processes. Additionally, it offers an understanding of the regulations and policies that are likely to shape the future of the industry. In essence, our report can help you stay ahead of the curve and better capitalize on industry trends.

According to our (Global Info Research) latest study, the global SiC & GaN Wafer Defect Inspection System market size was valued at US$ 986 million in 2025 and is forecast to a readjusted size of USD million by 2032 with a CAGR of % during review period.
The SiC & GaN Wafer Defect Inspection System industry is a narrowly defined segment of semiconductor metrology that covers only wafer-level defect inspection systems dedicated to silicon carbide (SiC) and gallium nitride (GaN) wafers across three process stages: SiC substrate, SiC epitaxy and SiC devices; GaN substrate, GaN epitaxy and GaN devices. In statistical terms, this segment includes automated tools that perform full-wafer or high-coverage defect detection and mapping on 100-200 mm SiC and GaN wafers used in power, RF and optoelectronic devices, but excludes generic silicon-only inspection tools and back-end/packaging inspection. Representative systems are explicitly marketed for SiC/GaN wafer defect inspection. KLA's Candela® 8520 is an integrated surface- and photoluminescence-inspection platform for SiC and GaN substrates and epitaxial wafers, detecting particles, scratches, cracks, stains, pits, carrots, basal-plane dislocations (BPDs), micropipes, stacking faults, grain boundaries and threading dislocations up to 200 mm diameter. Lasertec's SICA88 and next-generation SICA108 are SiC-only wafer inspection and review systems that integrate surface scatter and PL channels in a single tool to concurrently inspect and classify surface and crystallographic defects on SiC substrates and epi wafers. Onto Innovation's CeleroTM PL system is designed specifically for subsurface and crystalline defect inspection and classification in SiC and GaN wafers, using a laser-based phase-detection PL architecture to meet growing demand from power-device and compound-semiconductor lines. On the X-ray side, Rigaku's XRTmicron and XRTmicron Near-Fab systems provide fast, high-resolution X-ray topography for non-destructive imaging and mapping of dislocations, stacking faults, micropipes and grain boundaries in single-crystal wafers including SiC and GaN, bridging the gap between lab characterization and fab-compatible inspection.
Technically, these SiC & GaN wafer defect inspection systems combine several complementary modalities optimized for WBG materials and the six defined applications (SiC/GaN substrate, epi and devices). At the substrate and epitaxy stages, tool design is dominated by wide-field optical inspection with integrated photoluminescence (PL) and X-ray diffraction imaging/topography (XRDI/XRT). The latest PL systems illuminate SiC or GaN wafers with UV/blue lasers and capture variations in PL intensity and lifetime to map micropipes, BPDs, stacking faults and threading dislocations, while simultaneously using dark-field/bright-field scatter channels to capture surface defects such as pits, carrots and scratches-this is explicit in Candela 8520 and SICA88/108 datasheets. XRDI/XRT systems such as XRTmicron exploit diffraction contrast rather than absorption to produce full-wafer images of dislocation networks and grain boundaries, and are increasingly offered in "Near-Fab" configurations with automated wafer handling for routine SiC/GaN substrate and epi-wafer qualification. At the device stage, the same WBG wafers are inspected by a mix of patterned-wafer optical defect tools and electron-beam systems (bright-field/dark-field optical, e-beam inspection, review SEM/CD-SEM, CL-SEM) that focus on lithography, etch and metallization defects but are tuned for the thicker, high-voltage SiC/GaN device topographies; these are not always branded as "SiC/GaN-only", but in this industry definition they are counted only when configured and deployed on SiC or GaN device lines. Complementary lab-scale methods such as optical microscopy/DIC, AFM and various failure-analysis techniques are essential for understanding defect physics and validating inline methods, but in market statistics they usually form a smaller, supporting share compared with high-throughput PL/XRT systems.
Viewed under this narrow SiC/GaN scope, the SiC & GaN Wafer Defect Inspection System market is already a sizable and fast-growing niche within semiconductor metrology. Dedicated market studies for metrology and inspection equipment serving SiC and GaN estimate a market value of roughly US$ 958 million in 2025 with a ~18.34 % CAGR out to 2031, reflecting the combined spend on PL wafer inspectors, X-ray topography tools and related WBG-focused inspection/metrology platforms. This growth rate is several times higher than the broader wafer-inspection and semiconductor-metrology equipment markets, which are typically forecast in the mid-single-digit to high-single-digit CAGR range over similar horizons. The installed base is dominated by a small group of specialists: KLA (Candela series) for SiC/GaN substrate and epi PL/surface inspection; Lasertec (SICA88/SICA108) for SiC wafer inspection and review; Onto Innovation (Celero PL and compound-semi inspection portfolio) for subsurface and crystalline-defect mapping on SiC and GaN wafers; and Rigaku (XRTmicron family) for production-oriented X-ray topography on SiC and GaN substrates. Adoption is already broad among leading SiC substrate and epi suppliers and is spreading down the value chain into power-device fabs and GaN-device manufacturers, driven by the need to screen crystal and process defects that can trigger premature breakdown, current collapse or long-term reliability issues.
Looking ahead, the segment is shaped by a tension between rapid demand growth and significant technical/economic barriers. On the demand side, the ramp of EV traction inverters and onboard chargers, renewable-energy and grid-tied inverters, industrial motor drives, data-center power supplies and 5G/RF infrastructure is pushing SiC and GaN device shipments upward, and each incremental wafer start requires tighter control of BPDs, stacking faults, threading dislocations and surface defects-directly pulling through more PL/XRT capacity and more advanced inspection algorithms. On the technology side, vendors are moving from simple 2D surface/PL maps to subsurface and quasi-3D PL inspection, as exemplified by Celero PL and high-speed PL scanners, and from lab-only X-ray topography to Near-Fab automated XRT configurations, while increasingly embedding deep-learning-based defect classification and analytics in tools like Lasertec's SICA108. Key drivers therefore include: the steep growth of SiC/GaN power markets, stricter automotive-grade quality and reliability standards, the migration to 200 mm SiC wafers, and OEM/IDM efforts to reduce energy use in support of broader sustainability goals. Counterbalancing this, the industry faces high tool cost and cost-of-ownership, limited throughput for XRT/XRDI relative to optical PL systems, a shortage of experienced WBG-materials engineers, and the still-immature state of standardized, fab-wide flows that link detailed defect maps to yield and lifetime specifications. As a result, SiC & GaN Wafer Defect Inspection remains a strategic, high-growth but technically demanding niche, where vendors compete less on raw throughput and more on physics-based sensitivity, subsurface visibility and actionable correlations to power-device performance and reliability.
This report is a detailed and comprehensive analysis for global SiC & GaN Wafer Defect Inspection System market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Technology Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Our SiC & GaN Wafer Defect Inspection System Market report is a comprehensive study of the current state of the industry. It provides a thorough overview of the market landscape, covering factors such as market size, competitive landscape, key market trends, and opportunities for future growth. It also pinpoints the key players in the market, their strategies, and offerings.

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https://www.globalinforesearch.com/reports/3391641/sic---gan-wafer-defect-inspection-system

The research report encompasses the prevailing trends embraced by major manufacturers in the SiC & GaN Wafer Defect Inspection System Market, such as the adoption of innovative technologies, government investments in research and development, and a growing emphasis on sustainability. Moreover, our research team has furnished essential data to illuminate the manufacturer's role within the regional and global markets.

The research study includes profiles of leading companies operating in the SiC & GaN Wafer Defect Inspection System Market:

The report is structured into chapters, with an introductory executive summary providing historical and estimated global market figures. This section also highlights the segments and reasons behind their progression or decline during the forecast period. Our insightful SiC & GaN Wafer Defect Inspection System Market report incorporates Porter's five forces analysis and SWOT analysis to decipher the factors influencing consumer and supplier behavior.

Segmenting the SiC & GaN Wafer Defect Inspection System Market by application, type, service, technology, and region, each chapter offers an in-depth exploration of market nuances. This segment-based analysis provides readers with a closer look at market opportunities and threats while considering the political dynamics that may impact the market. Additionally, the report scrutinizes evolving regulatory scenarios to make precise investment projections, assesses the risks for new entrants, and gauges the intensity of competitive rivalry.

Major players covered: KLA Corporation、 Lasertec、 Visiontec Group、 Nanotronics、 TASMIT, Inc.、 Bruker、 LAZIN CO.,LTD、 HORIBA (EtaMax)、 Spirox Corporation、 Angkun Vision (Beijing) Technology、 Shenzhen Glint Vision、 CETC Fenghua Information Equipment、 CASI Vision Technology (Luoyang) Co., Ltd、 Shanghai Youruipu Semiconductor Equipment、 Dalian Chuangrui Spectral Technology Co., Ltd、 T-Vision.AI (Hangzhou) Tech Co.,Ltd.、 HGTECH、 Olympus (Evident)、 Nikon、 Leica Microsystems、 Rigaku、 Skyverse Technology、 Attolight、 Oxford Instruments、 Park Systems、 Hitachi High-Tech
SiC & GaN Wafer Defect Inspection System Market by Type: Optical Inspection System (Photoluminescence)、 X-ray Diffraction Imaging (XRDI) System、 Optical Microscopy (OM) / DIC、 Atomic Force Microscopy (AFM)、 Others
SiC & GaN Wafer Defect Inspection System Market by Application: SiC Substrate, Epitaxy and Devices、 GaN Substrate, Epitaxy and Devices

Key Profits for Industry Members and Stakeholders:

1. The report includes a plethora of information such as market dynamics scenario and opportunities during the forecast period.
2. Which regulatory trends at corporate-level, business-level, and functional-level strategies.
3. Which are the End-User technologies being used to capture new revenue streams in the near future.
4. The competitive landscape comprises share of key players, new developments, and strategies in the last three years.
5. One can increase a thorough grasp of market dynamics by looking at prices as well as the actions of producers and users.
6 Comprehensive companies offering products, relevant financial information, recent developments, SWOT analysis, and strategies by these players.

The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC & GaN Wafer Defect Inspection System product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC & GaN Wafer Defect Inspection System, with price, sales, revenue and global market share of SiC & GaN Wafer Defect Inspection System from 2020 to 2025.
Chapter 3, the SiC & GaN Wafer Defect Inspection System competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC & GaN Wafer Defect Inspection System breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2024.and SiC & GaN Wafer Defect Inspection System market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC & GaN Wafer Defect Inspection System.
Chapter 14 and 15, to describe SiC & GaN Wafer Defect Inspection System sales channel, distributors, customers, research findings and conclusion.

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