Silicon Carbide Semiconductor Device Market Size, Trends & Forecasts | Valuates Reports

Silicon Carbide Semiconductor Device Market Size

The global market for Silicon Carbide Semiconductor Device was valued at US$ 3988 million in the year 2024 and is projected to reach a revised size of US$ 15430 million by 2031, growing at a CAGR of 21.6% during the forecast period.

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This report studies SiC power devices, including SiC MOSFET Module, SiC MOSFET Discrete and SiC diode.

Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.

A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.

Silicon Carbide (SiC) devices are widely used in automotive, EV charging, industrial motor/drive, PV, energy storage, wind power, UPS, data center & server and rail transport, etc.

Automotive is the largest market of silicon carbide (SiC) power devices, driven by demand from China, UAS, EU, and Japan.

In automotive, SiC power devices are mainly used in automotive main inverter, on-board chargers (OBC) and DC/DC converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.

China is one of the world's largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

By Type
• SiC MOSFET Modules
• SiC MOSFET Discretes
• SiC Diode/SBD
• Others (SiC JFETs & FETs)

By Application
• Automotive & EV/HEV
• EV Charging
• Industrial Motor/Drive
• PV, Energy Storage, Wind Power
• UPS, Data Center & Server
• Rail Transport

Key Companies
STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Fuji Electric, Navitas (GeneSiC), Toshiba, Qorvo (UnitedSiC), San'an Optoelectronics, Littelfuse (IXYS), CETC 55, WeEn Semiconductors, BASiC Semiconductor, SemiQ, Diodes Incorporated, SanRex, Alpha & Omega Semiconductor, Bosch, KEC Corporation, PANJIT Group, Nexperia, Vishay Intertechnology, Zhuzhou CRRC Times Electric, China Resources Microelectronics Limited, StarPower, Yangzhou Yangjie Electronic Technology, Guangdong AccoPower Semiconductor, Changzhou Galaxy Century Microelectronics, Hangzhou Silan Microelectronics, Cissoid, SK powertech, InventChip Technology, Hebei Sinopack Electronic Technology, Oriental Semiconductor, Jilin Sino-Microelectronics, PN Junction Semiconductor (Hangzhou), United Nova Technology

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