Silicon Carbide (SiC) Power Semiconductor Market Share, Revenue, Price, Growth Rate Ranking Analysis Report 2025-2031

On Oct 15, the latest report "Global Silicon Carbide (SiC) Power Semiconductor Market 2025 by Manufacturers, Regions, Types and Applications, Forecast to 2031" from Global Info Research provides a detailed and comprehensive analysis of the global Silicon Carbide (SiC) Power Semiconductor market. The report provides both quantitative and qualitative analysis by manufacturers, regions and countries, types and applications. As the market is constantly changing, this report explores market competition, supply and demand trends, and key factors that are causing many market demand changes. The report also provides company profiles and product examples of some of the competitors, as well as market share estimates for some of the leading players in 2025.

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The global Silicon Carbide (SiC) Power Semiconductor market size is expected to reach $ 13600 million by 2031, rising at a market growth of 19.1% CAGR during the forecast period (2025-2031).
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies Silicon Carbide (SiC) Power Semiconductors, including SiC MOSFET Module, SiC MOSFET Discrete and SiC diode.
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers-competition has intensified as these players scale 150-200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.
This report studies the global Silicon Carbide (SiC) Power Semiconductor production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for Silicon Carbide (SiC) Power Semiconductor and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2024 as the base year. This report explores demand trends and competition, as well as details the characteristics of Silicon Carbide (SiC) Power Semiconductor that contribute to its increasing demand across many markets.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approval.
Silicon Carbide (SiC) Power Semiconductor market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type: SiC MOSFET Module、 SiC MOSFET Discrete、 SiC SBD、 Others (SiC JFETs & FETs)
Market segment by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 San'an Optoelectronics、 Littelfuse、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 GE Aerospace、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 Hebei Sinopack Electronic Technology、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology、 InventChip Technology、 Leadrive Technology、 HAIMOSIC (SHANGHAI)、 Suzhou Sko Semiconductor、 Shenzhen Aishite Technology、 Suzhou Xizhi Technology、 Archimedes Semiconductor (Hefei)、 Grecon Semiconductor (Shanghai)

The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide (SiC) Power Semiconductor product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide (SiC) Power Semiconductor, with price, sales quantity, revenue, and global market share of Silicon Carbide (SiC) Power Semiconductor from 2020 to 2025.
Chapter 3, the Silicon Carbide (SiC) Power Semiconductor competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide (SiC) Power Semiconductor breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment Silicon Carbide (SiC) Power Semiconductor the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the Silicon Carbide (SiC) Power Semiconductor sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2024.and Silicon Carbide (SiC) Power Semiconductor market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide (SiC) Power Semiconductor.
Chapter 14 and 15, to describe Silicon Carbide (SiC) Power Semiconductor sales channel, distributors, customers, research findings and conclusion.

The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Silicon Carbide (SiC) Power Semiconductor
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace

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