SiC Power Devices Market Research Report: Sales, Volume, Revenue and Players Analysis 2025

Global Info Research's report is a detailed and comprehensive analysis for global SiC Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the SiC Power Devices market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

The global SiC Power Devices market size is expected to reach $ 18449 million by 2031, rising at a market growth of 20.1% CAGR during the forecast period (2025-2031).
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Silicon carbide (SiC) power devices are wide-bandgap semiconductor components-chiefly SiC Schottky barrier diodes (SBDs), SiC MOSFETs (discrete and trench/planar variations), SiC JFETs, and integrated SiC power modules-that deliver much higher breakdown voltages, faster switching, lower conduction and switching losses, and superior thermal performance than silicon counterparts. Product types range from low-voltage (≤ 200-650 V) and automotive-grade 600-1200 V discrete MOSFETs and SBDs used in onboard chargers (OBCs) and DC-DC converters, to high-voltage (1200 V-3300 V and above) power MOSFETs and packaged modules deployed in EV traction inverters, PV/utility inverters, industrial motor drives and traction/rail applications. Key applications today are dominated by electric vehicles (traction inverters and on-board charging), fast chargers, renewable-energy inverters, data-center and telecom power supplies, and industrial drives-areas that benefit most from SiC's efficiency and thermal advantages and where system-level cost and efficiency tradeoffs favor SiC adoption.
The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers-competition has intensified as these players scale 150-200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.
This report studies the global SiC Power Devices production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for SiC Power Devices and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2024 as the base year. This report explores demand trends and competition, as well as details the characteristics of SiC Power Devices that contribute to its increasing demand across many markets.

Market segment by Type: SiC MOSFET Module、 SiC MOSFET Discrete、 SiC SBD、 Others (SiC JFETs & FETs)
Market segment by Application:Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 San'an Optoelectronics、 Littelfuse、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 GE Aerospace、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 Hebei Sinopack Electronic Technology、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology、 InventChip Technology、 Leadrive Technology、 HAIMOSIC (SHANGHAI)、 Suzhou Sko Semiconductor、 Shenzhen Aishite Technology、 Suzhou Xizhi Technology、 Archimedes Semiconductor (Hefei)、 Grecon Semiconductor (Shanghai)

To Get More Details About This Study, Please Click Here: https://www.globalinforesearch.com/reports/2978109/sic-power-devices

The overall report focuses on primary sections such as - market segments, market outlook, competitive landscape, and company profiles. The segments provide details in terms of various perspectives such as end-use industry, product or service type, and any other relevant segmentation as per the market's current scenario which includes various aspects to perform further marketing activity. The market outlook section gives a detailed analysis of market evolution, growth drivers, restraints, opportunities, and challenges, Porter's 5 Force's Framework, macroeconomic analysis, value chain analysis and pricing analysis that directly shape the market at present and over the forecasted period. The drivers and restraints cover the internal factors of the market whereas opportunities and challenges are the external factors that are affecting the market. The market outlook section also gives an indication of the trends influencing new business development and investment opportunities.

The Primary Objectives in This Report determine the size of the total market opportunity of global and key countries,assess the growth potential for SiC Power Devices and competitive factors affecting the marketplace,forecast future growth in each product and end-use market. Also,this report profiles key players in the global SiC Power Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments.

SiC Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by region, regional analysis covers North America (United States, Canada, and Mexico),Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),South America (Brazil, Argentina, Colombia, and Rest of South America),Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).

The report provides insights regarding the lucrative opportunities in the SiC Power Devices Market at the country level. The report also includes a precise cost, segments, trends, region, and commercial development of the major key players globally for the projected period.

The SiC Power Devices Market report comprehensively examines market structure and competitive dynamics. Researching the SiC Power Devices market entails a structured approach beginning with clearly defined objectives and a comprehensive literature review to understand the current landscape. Methodologies involve a mix of primary research through interviews, surveys, and secondary research from industry reports and databases. Sampling strategies ensure representation, while data analysis utilizes statistical and analytical techniques to identify trends, market sizing, and competitive landscapes. Key areas of focus include trend analysis, risk assessment, and forecasting. Findings are synthesized into a detailed report, validated through peer review or expert consultation, and disseminated to stakeholders, with ongoing monitoring to stay abreast of developments.

Contact Us:
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-58030175

Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.

This release was published on openPR.