Silicon Carbide (SiC) Power Semiconductor Market Share Driven by Growth in Automotive and EV Applications | Valuates Reports

Silicon Carbide (SiC) Power Semiconductor Market Size
The global market for Silicon Carbide (SiC) Power Semiconductor was valued at US$ 3944 million in the year 2024 and is projected to reach a revised size of US$ 13520 million by 2031, growing at a CAGR of 19.5% during the forecast period.

View sample report
https://reports.valuates.com/request/sample/QYRE-Auto-38F7393/Global_Silicon_Carbide_SiC_Power_Semiconductor_Market_Insights_Forecast_to_2028

The Silicon Carbide (SiC) Power Semiconductor market is experiencing robust growth, driven by rising adoption in automotive, EV/HEV, EV charging, industrial motors, energy storage, PV, wind power, and data center applications. SiC power semiconductors are highly valued for their superior efficiency, high thermal conductivity, fast switching capabilities, and ability to operate under high voltage and temperature conditions. Increasing demand for energy-efficient power systems, electric vehicles, and renewable energy solutions are shaping key market trends and driving overall market growth globally.

Among product types, SiC MOSFET modules hold the largest market share, widely used in automotive power electronics, industrial drives, and renewable energy systems for efficient power conversion. SiC MOSFET discrete devices and SiC Schottky Barrier Diodes (SBDs) are also growing rapidly due to their high performance in EV inverters, industrial applications, and energy storage systems. Other SiC devices, including JFETs and FETs, serve niche high-performance applications, supporting specialized industrial and electronic requirements.

In applications, automotive and EV/HEV lead the market, reflecting the critical role of SiC power semiconductors in electric vehicle inverters, chargers, and power management systems. EV charging infrastructure, industrial motors, and drives are key growth drivers, leveraging SiC devices for reduced energy loss and higher efficiency. PV, energy storage, and wind power applications are expanding rapidly, while UPS, data centers, and rail transport further highlight the versatility and broad adoption of SiC power semiconductors across high-demand sectors.

Key companies leading the Silicon Carbide Power Semiconductor market include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Fuji Electric, Navitas (GeneSiC), Toshiba, Qorvo (UnitedSiC), San'an Optoelectronics, Littelfuse (IXYS), CETC 55, WeEn Semiconductors, BASiC Semiconductor, SemiQ, Diodes Incorporated, SanRex, Alpha & Omega Semiconductor, Bosch, KEC Corporation, PANJIT Group, Nexperia, Vishay Intertechnology, Zhuzhou CRRC Times Electric, China Resources Microelectronics, StarPower, Yangzhou Yangjie Electronic Technology, Guangdong AccoPower Semiconductor, Changzhou Galaxy Century Microelectronics, Hangzhou Silan Microelectronics, Cissoid, SK Powertech, InventChip Technology, Hebei Sinopack Electronic Technology, Oriental Semiconductor, Jilin Sino-Microelectronics, PN Junction Semiconductor (Hangzhou), and United Nova Technology. These organizations maintain competitive market share through advanced SiC production technologies, robust quality standards, and global supply networks.

Regionally, North America holds a leading position in the SiC Power Semiconductor market, supported by strong automotive, industrial, and energy infrastructure. Europe is also significant, driven by industrial automation, renewable energy projects, and EV adoption. The Asia-Pacific region, particularly China, Japan, and South Korea, is witnessing the fastest market growth, fueled by rapid expansion of electric vehicles, renewable energy projects, and industrial modernization. The market forecast indicates continued expansion, driven by technological innovation, increasing adoption in EV and renewable energy systems, and growing demand for high-efficiency power semiconductors across global industrial and automotive sectors.

by Type

• SiC MOSFET Module
• SiC MOSFET Discrete
• SiC SBD
• Others (SiC JFETs & FETs)

by Application

• Automotive & EV/HEV
• EV Charging
• Industrial Motor/Drive
• PV, Energy Storage, Wind Power
• UPS, Data Center & Server
• Rail Transport
• Others

By Company

STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Fuji Electric, Navitas (GeneSiC), Toshiba, Qorvo (UnitedSiC), San'an Optoelectronics, Littelfuse (IXYS), CETC 55, WeEn Semiconductors, BASiC Semiconductor, SemiQ, Diodes Incorporated, SanRex, Alpha & Omega Semiconductor, Bosch, KEC Corporation, PANJIT Group, Nexperia, Vishay Intertechnology, Zhuzhou CRRC Times Electric, China Resources Microelectronics Limited, StarPower, Yangzhou Yangjie Electronic Technology, Guangdong AccoPower Semiconductor, Changzhou Galaxy Century Microelectronics, Hangzhou Silan Microelectronics, Cissoid, SK powertech, InventChip Technology, Hebei Sinopack Electronic Technology, Oriental Semiconductor, Jilin Sino-Microelectronics, PN Junction Semiconductor (Hangzhou), United Nova Technology

View full report
https://reports.valuates.com/market-reports/QYRE-Auto-38F7393/global-silicon-carbide-sic-power-semiconductor

Valuates,
4th Floor,
Balaraj's Arcade,
Whitefield Main road,
Bangalore 560066,

Valuates offers an extensive collection of market research reports that helps companies to take intelligent strategical decisions based on current and forecasted Market trends.

This release was published on openPR.