SiC Epitaxy Market Share Driven by Power Electronics and RF Device Applications | Valuates Reports

SiC Epitaxy Market Size
The global market for SiC Epitaxy was valued at US$ 372 million in the year 2024 and is projected to reach a revised size of US$ 2688 million by 2031, growing at a CAGR of 33.1% during the forecast period.

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The SiC epitaxy market is gaining traction as demand for wide bandgap semiconductors continues to grow in power electronics and communication devices. Market size is being influenced by rising adoption of electric vehicles, renewable energy systems, and 5G infrastructure. Industry market trends highlight the importance of silicon carbide epitaxy in delivering higher efficiency, improved thermal performance, and durability compared to traditional silicon-based solutions.

In terms of type, the market includes epitaxial layers with thickness below 12μm and those above 30μm. Thickness variations are selected based on the performance requirements of end-use devices. Epitaxial wafers below 12μm are often aligned with applications needing compact design and lower defect density, while wafers above 30μm are used in high-power and high-voltage components where enhanced robustness is essential.

By application, SiC epitaxy is widely adopted in power components, where it enables higher efficiency in power conversion and management systems. RF devices also represent a key application, benefiting from silicon carbide's ability to support high-frequency and high-power communication systems. Other applications span industries where reliability, efficiency, and thermal stability are critical performance factors.

Looking forward, the SiC epitaxy market forecast is supported by increasing investment in semiconductor manufacturing capacity, advancements in epitaxial growth techniques, and expanding demand for next-generation energy and communication technologies. Market growth is expected to be shaped by continued innovation in wafer quality, scalability, and integration across a broad range of high-performance electronic applications.

by Type

• Thickness below 12μm
• Thickness above 30μm

by Application

• Power Component
• RF Device
• Others

By Company
II-VI Advanced Materials, Norstel, Cree, ROHM, Mitsubishi Electric Corporation, Infineon, EpiWorld, TIANYU SEMICONDUCTOR Technology, NipponStee&Sumitomo Metall, Episil-Precision, Showa Denko, Dow

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This release was published on openPR.