Silicon Carbide (SiC) Semiconductor Devices Market Surges with EV and Power Electronics Demand

Silicon Carbide (SiC) Semiconductor Devices Market Size

The global Silicon Carbide (SiC) Semiconductor Devices market is projected to grow from US$ 1396.6 million in 2024 to US$ 1938.8 million by 2030, at a Compound Annual Growth Rate (CAGR) of 5.6% during the forecast period.

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According to our Semiconductor Research Center, in 2022, the global SiC wafer was valued at US$ 750 million, will grow rapidly in next six years, driven by the strong demand from electric vehicle (EV). Currently the 6 inch SiC substrates are dominating this market, and in next six years, more players will put into production the 8 inch SiC wafers. Currently the key players of SiC are mainly located headquartered United States, Europe, Japan and China, especially in China, more companies are entering the SiC market. It is predicted that, Chinese companies will play key roles in the SiC market in next ten years.

In terms of production side, this report researches the Silicon Carbide (SiC) Semiconductor Devices production, growth rate, market share by manufacturers and by region (region level and country level), from 2019 to 2024, and forecast to 2030.

In terms of consumption side, this report focuses on the sales of Silicon Carbide (SiC) Semiconductor Devices by region (region level and country level), by company, by Type and by Application. from 2019 to 2024 and forecast to 2030.

By Type
• SIC Diode
• SIC Transistor
• Thyristors
• Others

By Application
• Automotive
• Aerospace and Defense
• Energy
• Industrial & Communication
• Consumer Electronics

Key Companies
STMicroelectronics, Cree(Wolfspeed), ROHM, Infineon Technologies, Microchip Technology Corporation, Toshiba Corporation, ON Semiconductor

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