Press release
Silicon Carbide Power Semiconductor Market Growth Analysis, Trends, Share, Market Size And Forecast To 2033
"The new report published by The Business Research Company, titled Silicon Carbide Power Semiconductor Global Market Report 2024 - Market Size, Trends, And Global Forecast 2024-2033, delivers an in-depth analysis of the leading size and forecasts, investment opportunities, winning strategies, market drivers and trends, competitive landscape, and evolving market trends.As per the report, the silicon carbide power semiconductor market size has grown exponentially in recent years. It will grow from $0.99 billion in 2023 to $1.24 billion in 2024 at a compound annual growth rate (CAGR) of 26.0%. The silicon carbide power semiconductor market size is expected to see exponential growth in the next few years. It will grow to $3.16 billion in 2028 at a compound annual growth rate (CAGR) of 26.3%.
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Rising Electric Vehicle Adoption Fuels Growth In Silicon Carbide Power Semiconductor Market
The rising penetration of electric vehicles is expected to drive the growth of the silicon carbide power semiconductor market going forward. An electric vehicle (EV) is a type of vehicle that uses one or more electric motors for propulsion. The penetration of electric vehicles is due to technological innovation, regulatory support, consumer demand, and industry investment. Silicon carbide (SiC) power semiconductors play a crucial role in electric vehicles (EVs) by improving efficiency, reducing weight, and enhancing overall performance compared to traditional silicon-based semiconductors. Their adoption continues to grow as EV manufacturers seek to optimize the performance of their vehicles and improve the driving experience for consumers. For instance, in March 2022, according to an article published by the Department of Energy, a US-based government agency, sales of new light-duty plug-in electric vehicles, encompassing both all-electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs), nearly doubled from 308,000 in 2020 to 608,000 in 2021. Therefore, the rising penetration of electric vehicles drives growth in the silicon carbide power semiconductor market.
Nexperia Launches Advanced 1200V SiC MOSFETs To Enhance Industrial Applications
Major companies operating in the silicon carbide power semiconductor market focus on developing innovative products, such as silicon carbide MOSFETs, to offer high performance and reliability in industrial applications. Silicon Carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are power semiconductor devices that utilize silicon carbide (SiC) as the semiconductor material in their construction. For instance, in November 2023, Nexperia B.V., a Netherlands-based semiconductor company, launched discrete 1200 V MOSFETs, a silicon carbide MOSFETs. These new devices promise to revolutionize high-voltage applications with their unique blend of features. Designed to optimize efficiency and reliability, Nexperia's silicon carbide MOSFETs boast ultra-low switching losses and enhanced thermal performance, ensuring robust operation even under demanding conditions.
The silicon carbide power semiconductor market covered in this report is segmented -
1) By Type: Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs), Hybrid Modules, Schottky Barrier Diodes (SBDS), Insulated Gate Bipolar Transistors (IGBT), Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), Other Types
2) By Voltage Range: 301-900 V, 901-1700 V, Above 1701 V
3) By Wafer Type: SiC Epitaxial Wafers, Blank SiC Wafers
4) By Application: Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, Electric Vehicles Charging Infrastructure, RF Devices, Other Applications
5) By End-User: Industrial, Automotive, Energy And Power, Information Technology And Telecom, Transportation, Aerospace And Defense, Other End-Users
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Major companies operating in the silicon carbide power semiconductor market are Samsung Electronics Co. Ltd., Panasonic Corporation, Mitsubishi Electric Corporation, Toshiba Corporation, Eaton Corporation plc, Texas Instruments Inc., STMicroelectronics N.V., Infineon Technologies AG, BorgWarner Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Danfoss A/S, Microchip Technology Inc., ON Semiconductor Corporation, Fuji Electric Co. Ltd., ROHM Co. Ltd., Littelfuse Inc., Microsemi Corporation, Wolfspeed Inc., GeneSiC Semiconductor Inc.
Contents of the report:
1. Executive Summary
2. Silicon Carbide Power Semiconductor Market Report Structure
3. Silicon Carbide Power Semiconductor Market Trends And Strategies
4. Silicon Carbide Power Semiconductor Market - Macro Economic Scenario
5. Silicon Carbide Power Semiconductor Market Size And Growth
…..
27. Silicon Carbide Power Semiconductor Market Competitor Landscape And Company Profiles
28. Key Mergers And Acquisitions
29. Future Outlook and Potential Analysis
30. Appendix
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