Press release
At 27.1% Growth Rate: SiC GaN Power Semiconductor Market will Surpass to $7.05 Billion by 2030
The global SiC GaN power semiconductor market size was valued at $0.79 billion in 2020, and is projected to reach $7.05 billion by 2030, registering a CAGR of 27.1% from 2021 to 2030.๐๐ผ๐๐ป๐น๐ผ๐ฎ๐ฑ ๐ฅ๐ฒ๐๐ฒ๐ฎ๐ฟ๐ฐ๐ต ๐ฅ๐ฒ๐ฝ๐ผ๐ฟ๐ ๐ฆ๐ฎ๐บ๐ฝ๐น๐ฒ & ๐ง๐ข๐ @ https://www.alliedmarketresearch.com/request-sample/14593
Power semiconductors are components used to convert energy from one form to another at various stages between the points of energy generation and energy consumption. Traditionally, silicon-based devices have been predominantly used for high-voltage applications, however, new materials such as silicon carbide (SiC) and gallium nitrate (GaN) for power applications are gaining popularity to take advantage of superior material properties. Silicon carbide (SiC) and gallium nitride (GaN) have higher band gap energies than silicon as well as other attributed benefits to power semiconductors devices.
The higher band gap energies lead to reduced leakage current and are also favorable for another common power device, the Schottky Barrier Diode. Other advantageous material properties of SiC and GaN over traditional silicon include better heat conduction and lower resistance in bulk structures. These attributes to gain in momentum of the SiC GaN power semiconductor market (SiC GaN ์ ๋ ฅ ๋ฐ๋์ฒด ์์ฅ).
Significant factors that impact growth of the SiC GaN power semiconductor market include increase in demand for power electronics modules across various industry verticals, advantages of compound semiconductors (SiC) over silicon-based technology, rise in installation of solar photovoltaic panels for electricity generation, decrease in prices of GaN semiconductor, rise in demand for GaN power semiconductor for wireless charging, and increase in requirement of GaN devices for commercial RF applications.
๐ฅ๐ฒ๐พ๐๐ฒ๐๐ ๐ณ๐ผ๐ฟ ๐๐๐๐๐ผ๐บ๐ถ๐๐ฎ๐๐ถ๐ผ๐ป @ https://www.alliedmarketresearch.com/request-for-customization/14593
However, lack of availability of GaN material, high wafer cost of SiC semiconductors, and complexity in supply chain and designing process of SiC semiconductor technology hampers the SiC GaN power semiconductor market growth. On the contrary, advent of 5G communication, and government initiatives in HVDC and smart grid are expected to offer lucrative opportunities for the SiC GaN power semiconductor market analysis during the forecast period.
The report offers detailed segmentation of the global SiC GAN power semiconductor market based on material, product, application, industry vertical, and region.
Based on material, the SiC segment held the highest market share in 2020, holding nearly three-fourths of the total market share, and is expected to continue its leadership status during the forecast period. However, the GaN segment is estimated to register the highest CAGR of 30.3% from 2021 to 2030.
๐๐ป๐พ๐๐ถ๐ฟ๐ ๐๐ฒ๐ณ๐ผ๐ฟ๐ฒ ๐๐๐๐ถ๐ป๐ด @ https://www.alliedmarketresearch.com/purchase-enquiry/14593
Based on industry vertical, the IT and telecom segment held the largest market share in 2020, holding more than one-fifths of the total market share, and is expected to continue its leadership status during the forecast period. Moreover, the automotive segment is projected to register the highest CAGR of 30.5% from 2021 to 2030.
Region wise, Asia-Pacific holds a significant share in the global SiC GaN power semiconductor market. China dominates the market share in this region, owing to presence of several leading manufacturers in the region. Besides, increasing demand for consumer electronics and rise in infrastructure development have also contributed to the growth of SiC GaN power semiconductor in the region.
๐๐๐ ๐ก๐ผ๐ & ๐๐ฒ๐ ๐๐ ๐ฐ๐น๐๐๐ถ๐๐ฒ ๐๐ถ๐๐ฐ๐ผ๐๐ป๐ ๐ผ๐ป ๐ง๐ต๐ถ๐ ๐ฅ๐ฒ๐ฝ๐ผ๐ฟ๐: https://www.alliedmarketresearch.com/checkout-final/e27398a2e8a457ca22b12970c50965ef
The key players profiled in the report include Fujitsu Limited, Infineon Technologies, Maxim Integrated, Microchip Technology, NXP Semiconductors, ON Semiconductor Corporation, Renesas Electronics Corporation, STMicroelectronics, Texas Instruments, and Toshiba Corporation. Market players have adopted various strategies, such as product launch, collaboration & partnership, joint venture, and acquisition to expand their foothold in the SiC GaN power semiconductor market (SiC GaNใใฏใผๅๅฐไฝๅธๅ ด).
Key Findings of The Study
โข In 2020, the SiC segment accounted for maximum revenue and is projected to grow at a notable CAGR of 27.3% during the forecast period.
โข The power MOSFET and IGBT segments together accounted for more than 25.0% of the SiC GaN power semiconductor market share in 2020.
โข The automotive segment of the SiC GaN power semiconductor market is projected to grow at a CAGR of 30.5% during the forecast period.
โข Asia-Pacific contributed major share in the SiC GaN power semiconductor market, accounting for more than 45.0% share in 2020.
๐ฆ๐ถ๐บ๐ถ๐น๐ฎ๐ฟ ๐ฅ๐ฒ๐ฝ๐ผ๐ฟ๐๐ ๐ถ๐ป ๐๐ป๐ฑ๐๐๐๐ฟ๐:
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๐ฆ๐ฒ๐บ๐ถ๐ฐ๐ผ๐ป๐ฑ๐๐ฐ๐๐ผ๐ฟ ๐ฃ๐ฎ๐ฐ๐ธ๐ฎ๐ด๐ถ๐ป๐ด ๐ ๐ฎ๐ฟ๐ธ๐ฒ๐(๋ฐ๋์ฒด ํจํค์ง ์์ฅ): Global Opportunity Analysis, 2021-2030
https://www.alliedmarketresearch.com/semiconductor-packaging-market-A09496
๐ฆ๐ฒ๐บ๐ถ๐ฐ๐ผ๐ป๐ฑ๐๐ฐ๐๐ผ๐ฟ ๐๐ฎ๐ฝ๐ถ๐๐ฎ๐น ๐๐พ๐๐ถ๐ฝ๐บ๐ฒ๐ป๐ ๐ ๐ฎ๐ฟ๐ธ๐ฒ๐ (๋ฐ๋์ฒด ์๋ณธ์ฅ๋น ์์ฅ): Global Opportunity Analysis, 2019-2026
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