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Insulated Gate Bipolar Transistor (IGBT) Market Analysis 2024 -2033: Forecasted Market Size, Top Segments, And Largest Region | Renesas Electronics Corporation, Infineon Technologies AG, Fuji Electric Co. Ltd., ROHM Co. Ltd.,
Insulated Gate Bipolar Transistor (IGBT) Market Characteristics
The Business Research Company offers in-depth market insights through Insulated Gate Bipolar Transistor (IGBT) Global Market Report 2024, providing businesses with a competitive advantage by thoroughly analyzing the market structure, including estimates for numerous segments and sub-segments.
Market Size And Growth Forecast:
The insulated gate bipolar transistor (igbt) market size has grown rapidly in recent years. It will grow from $8.32 billion in 2023 to $9.48 billion in 2024 at a compound annual growth rate (CAGR) of 14.0%. The growth in the historic period can be attributed to increased demand for power electronics, increased need for energy efficiency, rise in industrial automation, increased demand for electronic components, increased demand in consumer electronics sector.
The insulated gate bipolar transistor (igbt) market size is expected to see rapid growth in the next few years. It will grow to $15.77 billion in 2028 at a compound annual growth rate (CAGR) of 13.6%. The growth in the forecast period can be attributed to rising electric mobility, increasing energy storage systems, growing demand from aerospace and defense, increasing electrification, renewable energy expansion. Major trends in the forecast period include adoption of wide bandgap semiconductors, miniaturization trend, integration with sic diodes, smart igbts, digital control.
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Market Segmentation:
The main types of insulated gate bipolar transistor (IGBT) are discrete and modular. The discrete insulated gate bipolar transistors used in power factor correction circuits and dc/ac converter circuits, as well as ups, power conditioners, air conditioners, and welding equipment. IGBT have there types of power rating namely high power, medium power and low power and are used in ev/hev, renewables, ups, rail, motor drives, industrial and commercial.
Major Driver - Rising Electric Vehicle Production Fuels Insulated Gate Bipolar Transistor (IGBT) Market Growth
The increased production of electric vehicles (EV) is expected to propel the growth of the insulated gate bipolar transistor (IGBT) market. IGBTs are a type of semiconductor device used as an electronic switch that is used to take DC power from a car battery and convert AC control signals to the high power needed to turn the motor through an inverter. IGBT is a highly efficient component for EV motors due to its fast switching characteristics which lead to less power usage resulting in greater mileage. There will be a significant demand for IGBTs in response to the increased production of EVs. For instance, according to the International Energy Agency (IEA), there will be 125 million electric vehicles on the roads by 2030. The global electric car sales increased by roughly 140% in the first. For instance, in July 2023, according to the International Energy Agency, a France-based intergovernmental organization, sales of electric vehicles were 10 million in 2022, and there will be an increase to 14 million sales of electric vehicles in 2023. Therefore, the increased production of electric vehicles drives the insulated gate bipolar transistor market.
Competitive Landscape:
Major companies operating in the insulated gate bipolar transistor (igbt) market include Renesas Electronics Corporation, Infineon Technologies AG, Fuji Electric Co. Ltd., ROHM Co. Ltd., SEMIKRON International GmbH, ABB Group, Advanced Power Electronics Corporation, Alpha and Omega Semiconductor Inc., Applied Power Systems Inc., C&H Technology Inc., Darrah Electric Company, Dynex Semiconductor Ltd., Fujitsu Ltd., International Rectifier Ltd., Jameco Electronics Co., Littelfuse Inc., Microsemi Corporation, Mitsubishi Electric Corporation, NXP Semiconductors N.V., ON Semiconductor Corporation, Powere*x Inc., Sensitron Semiconductor Co., Silan Microelectronics Co. Ltd., STMicroelectronics N.V., Toshiba Corporation, Transphorm Inc., Vishay Intertechnology Inc., WeEn Semiconductors Co. Ltd., Wolfspeed Inc., Xilinx Inc., Yangzhou Yangjie Electronic Technology Co. Ltd.
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Top Trend - Toshiba Introduces Enhanced Gt30J65Mrb Insulated Gate Bipolar Transistor (IGBT) For Improved Power Factor Correction
Major companies operating in insulated gate bipolar transistor (IGBT) are focusing on innovating new products, such as the GT30J65MRB, to provide reliable services to customers. GT30J65MRB is used as an insulated gate bipolar transistor within power factor correction (PFC) air conditioners, home appliances, and power supplies for industrial equipment. For instance, in March 2023, Toshiba Electronic Devices & Storage Corporation, a Japan-based company that manufactures electronic devices, launched the GT30J65MRB. GT30J65MRB is a 650 volts (V) -rated discrete insulated gate bipolar transistor (IGBT). GT30J65MRB is used as an inverter in air conditioners. GT30J65MRB enhances switching losses with an improvement of at least 40% when compared to previous-generation devices.
The Table Of Content For The Market Report Include:
1. Executive Summary
2. Insulated Gate Bipolar Transistor (IGBT) Market Characteristics
3. Insulated Gate Bipolar Transistor (IGBT) Market Trends And Strategies
4. Insulated Gate Bipolar Transistor (IGBT) Market - Macro Economic Scenario
5. Insulated Gate Bipolar Transistor (IGBT) Market Size And Growth
…..
27. Insulated Gate Bipolar Transistor (IGBT) Market Competitor Landscape And Company Profiles
28. Key Mergers And Acquisitions
29. Future Outlook and Potential Analysis
30. Appendix
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