With 21.8% CAGR, Extreme Ultraviolet (EUV) Lithography Market Growth to Surpass USD 25.3 billion

The EUV lithography market is expected to reach USD 25.3 billion by 2028 from USD 9.4 billion in 2023, at a CAGR of 21.8% during the 2023-2028 period. Extreme ultraviolet reflectometry (EUVR) is a new imaging technique have been created because of developments in EUV lithography. Extreme ultraviolet reflectometry (EUVR), which can be used to quantify the thickness and refractive index of thin films utilized in EUV lithography, is one such method. This method is essential for assuring the quality of the finished product and the precision of the lithography process. The non-destructive characterization of layer systems at the sub-nanometer scale is made possible by the short-wavelength photon-in/photon-out technology EUVR. In the semiconductor industry, EUVR is utilized to make intricate circuit layouts with a half-pitch below 20 nm that are difficult to expose using conventional optical lithography methods. In comparison to earlier lithography devices, which used light with a considerably shorter wavelength (193 nanometers), EUV lithography is a sophisticated technique.

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The increased demand for high-performance computing (HPC) acts as a driver to the EUV lithography market, it leads to an increase in the demand for EUV lithography by enabling the production of advanced semiconductor devices that meet the specific requirements of HPC applications. High-performance computing requires computationally intensive tasks such as data analytics, artificial intelligence, and machine learning, which require powerful and efficient semiconductor solutions. EUV lithography offers several key contributions to the HPC landscape. High-speed data access and big memory capacity are crucial for HPC applications. To satisfy these needs, EUV lithography's capacity to provide larger memory densities and enhanced performance is crucial. As an illustration, EUV lithography makes it possible to manufacture high-capacity memory components like dynamic random-access memory (DRAM) and NAND flash, which are crucial for storing and processing enormous quantities of data in HPC systems.

Implementing EUV lithography enables significant infrastructure changes in semiconductor fabrication facilities which leads to the restraint for the EUV lithography market. EUV light has a short wavelength, making it more susceptible to reflections, scattering, and absorption by materials. Specialized facilities with enhanced environmental controls, such as extreme cleanliness and thermal stability, are required to accommodate EUV lithography equipment. Building and maintaining such facilities add complexity and cost to the overall adoption of EUV technology. Example: EUV lithography requires a vacuum environment to prevent EUV light absorption by air molecules. Installing and maintaining vacuum systems across the entire lithography process, including source, scanner, and reticle stages, is a demanding task. Ensuring the necessary infrastructure and environmental conditions is crucial for successful EUV implementation.

The expansion of EUV (Extreme Ultraviolet) lithography into new market segments like microprocessors, integrated circuit, and memory present an opportunity for growth, and diversification in the EUV lithography market is an opportunity for its market growth. While EUV lithography has primarily been utilized in the semiconductor industry, there is significant potential to extend its application into other industries and market segments, such as memory and microprocessor. As the technology matures and becomes more accessible, exploring and adopting EUV lithography in areas beyond traditional chip manufacturing can unlock new opportunities and broaden the market reach.

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Key players in the EUV lithography market are ASML (Netherlands), Carl Zeiss AG(Germany), TOPPAN Inc.(Japan), NTT Advanced Technology Corporation(Japan), KLA Corporation(US), ADVANTEST CORPORATION(Japan), Ushio Inc.(Japan), SUSS Micro-Tec SE(Germany), AGC Inc.(Japan), Laertes Corporation(Japan), NuFlare Technology(Japan), Energetiq Technology Inc.(US), Photronics, Inc.(US), HOYA Corporation(Japan), TRUMPF(Germany), Rigaku Corporation(Japan), Edmund Optics Ltd.(US), Park Systems(Korea), Zygo Corporation(US), Imagine Optic(US) and Applied Materials, Inc.(US).

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