SiC & GaN Power Devices market is projected to grow from US$ 1410.7 million in 2023 to US$ 7633.3 million by 2029, at a Compound Annual Growth Rate (CAGR) of 32.5% - Valuates Reports

The global SiC & GaN Power Devices market is projected to grow from US$ 1410.7 million in 2023 to US$ 7633.3 million by 2029, at a Compound Annual Growth Rate (CAGR) of 32.5% during the forecast period.

Get sample report - https://reports.valuates.com/request/sample/QYRE-Auto-18Y625/Global_SiC_GaN_Power_Devices_Market_Insights_and_Forecast_to_2028

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Global SiC & GaN Power Devices main players are Infineon, Rohm, Mitsubishi, STMicro, Inc, Thales cryogenics, AIM, etc. Global top four manufacturers hold a share over 80%. Europe is the largest market, with a share nearly 35%.
In terms of production side, this report researches the SiC & GaN Power Devices production, growth rate, market share by manufacturers and by region (region level and country level), from 2018 to 2023, and forecast to 2029.
In terms of consumption side, this report focuses on the sales of SiC & GaN Power Devices by region (region level and country level), by company, by Type and by Application. from 2018 to 2023 and forecast to 2029.

This report presents an overview of global market for SiC & GaN Power Devices, capacity, output, revenue and price. Analyses of the global market trends, with historic market revenue/sales data for 2018 - 2022, estimates for 2023, and projections of CAGR through 2029.
This report researches the key producers of SiC & GaN Power Devices, also provides the consumption of main regions and countries. Highlights of the upcoming market potential for SiC & GaN Power Devices, and key regions/countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.
This report focuses on the SiC & GaN Power Devices sales, revenue, market share and industry ranking of main manufacturers, data from 2018 to 2023. Identification of the major stakeholders in the global SiC & GaN Power Devices market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.
This report analyzes the segments data by Type and by Application, sales, revenue, and price, from 2018 to 2029. Evaluation and forecast the market size for SiC & GaN Power Devices sales, projected growth trends, production technology, application and end-user industry.
Descriptive company profiles of the major global players, including Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microchip Technology, United Silicon Carbide Inc. and GeneSic, etc.

Segment by Type
GaN
SiC

Segment by Application
Consumer Electronics
Automotive & Transportation
Industrial Use
Others

Get detailed report - https://reports.valuates.com/market-reports/QYRE-Auto-18Y625/global-sic-gan-power-devices

Similar report -

https://reports.valuates.com/market-reports/QYRE-Auto-37P7009/global-gan-hemt-epitaxial-wafer

https://reports.valuates.com/market-reports/QYRE-Auto-2B12966/global-gan-on-sic

https://reports.valuates.com/market-reports/QYRE-Auto-31T9010/global-wide-bandgap-power-wbg-semiconductor-devices

Valuates offers an extensive collection of market research reports that helps companies to take intelligent strategical decisions based on current and forecasted Market trends.

Phone:
U.S. (TOLL FREE) : +1 (315) 215-3225
India: +91 8040957137

Email Id:
Please reach us at sales@valuates.com

This release was published on openPR.