Global SiC Based Power Electronics and Inverter Market Report, Market Size, Share, Trends, Analysis and Forecast to 2028

Stratistics MRC's Global SiC Based Power Electronics and Inverter Market value is expected to reach $7,298.7 million growing at a CAGR of 38.4% during 2022-2028.

Silicon carbide (SiC) is gaining popularity as an alternative to silicon based electronics components, particularly in wide band gap applications. The material provides a one-of-a-kind combination of higher power efficiency, smaller size, lighter weight, and reduced total system cost. SiC-based semiconductors are used in a variety of industries. This encompasses the automobile, information technology and telecommunications, aerospace and defence, and consumer electronics industries in both developed and developing countries. The material's acceptance in the industrial sectors has increased the global sale of these power electronics and inverters.
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Europe is projected to have the highest CAGR over the forecast period, owing to significant investments in automobile manufacturing by domestic firms are expected to generate demand for SiC-based goods with a variety of choices and divisions based on market trends. This is likely to increase regional market growth. Due to the increasing development of developing economies in compared to Western economies, key firms are extending business prospects centred on these developing markets.
Some of the key players profiled in the SiC Based Power Electronics and Inverter Market include Cree, Inc, Fuji Electric Co, Ltd, Mitsubishi Electric Corp, Renesas Electronics Corporation, ABB Group, Infineon Technologies AG, NXP Semiconductor N.V., ON Semiconductor, STMicroelectronics, ROHM Co.Ltd, Panasonic Corporation, Methode Electronics Inc, TE Electronics Ltd, Samsung Semiconductors Ltd, StarPower Semiconductors, Maxim Integrated Products Inc, Novoton Technologies Corporation, Texas Instruments Incorporated, Seiko Epson Corporation and ELAN Electronics.
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