Gan Power Device Market 2021 by Top Key Players, Types, Applications and Future Forecast to 2028

The GaN power device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028.

Gallium nitride (GaN) transistors have progressed as an improved performance alternative of silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to the silicon devices.

Major factors that are expected to boost the growth of the GaN power device market in the forecast period are the vast revenue generation from the customer electronics and automotive verticals and the wide bandgap property of GaN material supporting innovation. Furthermore, the
achievement of GaN in the RF-power electronics, the rise in the acceptance and the growing adoption of GaN RF power device in military, defense, and aerospace vertical are further propelling the growth of the GaN power device market.

On the other hand, the struggle from sic devices in the high-voltage power applications is further expected to obstruct the growth of the GaN power device market in the timeline period. In addition, the potential utilization of GaN in 5g infrastructure
applications in the electric and hybrid electric vehicles will further provide lucrative opportunities for the growth of the GaN power device market in the coming years. However, the increase in the material and construction prices and the design tasks and difficulty might further challenge the growth of the GaN power device market in near future.

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Global Gan Power Device Market: Major Players
Infineon Technologies AG
Panasonic Corporation
Taiwan Semiconductor Manufacturing Company
Efficient Power Conversion Corporation (EPC)
On Semiconductors
Toshiba Corporation
Texas Instruments Inc.
VisIC
GaN Systems
Fujitsu Limited

Global Gan Power Device Market: By Types
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules

Global Gan Power Device Market: By Applications
Consumer Electronics
IT & Telecommunication
Automotive
Aerospace & Defense
Others

Global Gan Power Device Market: Regional Analysis
All the regional segmentation has been studied based on recent and future trends, and the market is forecasted throughout the prediction period. The countries covered in the regional analysis of the Global Gan Power Device market report are U.S., Canada, and Mexico in North America, Germany, France, U.K., Russia, Italy, Spain, Turkey, Netherlands, Switzerland, Belgium, and Rest of Europe in Europe, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, China, Japan, India, South Korea, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), and Argentina, Brazil, and Rest of South America as part of South America.

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● Market segmentation analysis as well as qualitative and quantitative analysis incorporating the impact of economic and policy aspects.

● Regional and country-level analysis integrating the demand and provide forces that area unit influencing the expansion of the market.

● Market value USD Million and volume Units Million information for every phase and sub-segment.

● Competitive landscape involving the market share of major players, at the side of the new comes and methods adopted by players within the past 5 years.

● Comprehensive company profiles covering the merchandise offerings, key monetary info, recent developments, SWOT analysis, and methods used by the main market players.

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