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Global Insulated-Gate Bipolar Transistors (IGBTs) market report, size, share, trends and forecast to 2028

Global Insulated-Gate Bipolar Transistors (IGBTs) market

According to Stratistics MRC, the Global Insulated-Gate Bipolar Transistors (IGBTs) Market is accounted for $8.30 billion in 2022 and is expected to reach $15.19 billion by 2028 growing at a CAGR of 11.2% during the forecast period.

The Insulated Gate Bipolar Transistor, or IGBT, is a three-point power electronic semiconductor that serves primarily as a switch. By reducing the congestion in the power supply, this device can deliver quick switching with extremely high efficiency and a steady, smooth power supply. By introducing lesser switch loss, it reduces the heat tension on the electric devices or appliances, resulting in an increase in the device's lifespan. Because of its great power efficiency and blocking voltage, IGBTs (Insulated Gate Bipolar Transistors) are employed in a variety of applications.

The development of the IGBT market will be accelerated by the need to strengthen the foundations for renewable energy. By 2050, the total share of renewable energy in the electricity industry is anticipated to reach 85%, according to the International Renewable Energy Agency (IRENA). The usage of heat pumps and electric vehicles is anticipated to increase globally, according to the IRENA analysis. Renewable energy is a significant component of the long-term strategic investment development of governments in numerous nations.

By geography, Asia Pacific is projected to hold the largest market share during the forecast period owing to the presence of many electronic and semiconductor manufacturers in China, South Korea, and India. Due to its position as the world's top producer of electric vehicles, China is predicted to receive the largest revenue share. The country's market is expanding as a result of the increased use in electric automobiles. Along with the development of technology, the demand for energy-saving resources is also rising in India and Japan.

Some of the key players profiled in the Insulated-Gate Bipolar Transistors (IGBTs) Market include ABB Ltd, Infineon Technologies AG, LITTELFUSE, INC., StarPower Semiconductor Ltd., ROHM CO., LTD, Toshiba Corporation, Hitachi, Ltd., Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, Danfoss Group, SEMIKRON International GmbH, Renesas Electronics Corporation

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By Types:
• Discrete Insulated-Gate Bipolar Transistor (IGBT)
• Insulated-Gate Bipolar Transistor (IGBT) Module

By Power Ratings:
• High Power Rating
• Medium Power Rating
• Low Power Rating

By Applications:
• Consumer Electronics
• Energy & Power
• Electric Vehicle
• Inverter & Uninterrupted Power Supply (UPS)
• Industrial System
• Other Applications

Free Customization Offerings:
All the customers of this report will be entitled to receive one of the following free customization options:
● Company Profiling
● Comprehensive profiling of additional market players (up to 3)
● SWOT Analysis of key players (up to 3)
● Regional Segmentation
● Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
● Competitive Benchmarking
● Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

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Organization: Stratistics Market Research Consulting Pvt Ltd Phone: +1-301-202-5929
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Stratistics MRC offers a wide spectrum of research and consulting services with in-depth knowledge of different industries. Our research reports and publications are routed to help our clients to design their business models and enhance their business growth in the competitive market scenario. We have a strong team with hand-picked consultants including project managers, implementers, industry experts, researchers, research evaluators and analysts with years of experience in delivering the complex projects.

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