Magneto Resistive RAM (MRAM) Market Share, Size, Trends, Industry Growth and Forecast 2022-27

According to the latest report by IMARC Group, titled "Magneto Resistive RAM (MRAM) Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2022-2027," the global magneto resistive RAM (MRAM) market reached a value of US$ 275.4 Million in 2021. Looking forward, IMARC Group expects the market to reach a value of US$ 3,436.9 Million by 2027 exhibiting a CAGR of 48.60% during 2022-2027.

Report Metric
Historical: 2016-2021
Base Year: 2021
Forecast Year: 2022-2027

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Global Magneto Resistive RAM (MRAM) Market Industry Definition and Application:

Magnetic RAM, also known as magneto resistive random-access memory (MRAM), is a type of non-volatile memory that stores data using magnetic charges. Some widely available variants include spin-transfer torque and toggle MRAM. They use magnetic tunnel junction (MTJ), which consists of two magnetic layers separated by an insulation or dielectric layer. MRAM is a high-density and cost-effective RAM, and it also comprises of a capacitor and transistor that assist in retaining the information stored in the memory without a power source. Consequently, MRAM is widely used across several sectors, including robotics, automotive, aerospace, etc.

As the novel coronavirus (COVID-19) crisis takes over the world, we are continuously tracking the changes in the markets, as well as the industry behaviours of the consumers globally and our estimates about the latest market trends and forecasts are being done after considering the impact of this pandemic.

Global Magneto Resistive RAM (MRAM) Market Trends and Drivers:

One of the major drivers propelling the magneto resistive RAM (MRAM) market is the rising consumer electronics sector. In line with this, the rising utilization of MRAM in numerous electronic gadgets, including workstations, smart wearables, smartphones, digital cameras, etc., is further catalyzing the market growth. Moreover, the escalating demand for magnetic RAM in the aerospace and defense sectors for high-temperature data storage is also augmenting the global market. Besides this, various product innovations, such as the development of low-power MRAM variants for radiation-hardened microchips, are acting as significant growth-inducing factors. Additionally, the increasing utilization of MRAM in miniaturized and customized integrated circuits (ICs) is positively influencing the market growth. Apart from this, the growing adoption of MRAM-embedded medical sensors for non-invasive diagnostic testing of several medical disorders is projected to fuel the magneto resistive RAM (MRAM) market over the forecasted period.

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Global Magneto Resistive RAM (MRAM) Market 2022-2027 Analysis and Segmentation:

The report has segmented the market on the basis on region, type offering, application.

Breakup by Type:

Toggle MRAM
Spin-Transfer Torque MRAM (STT-MRAM)       

Breakup by Offering:

Stand-alone
Embedded

Breakup by Application:

Consumer Electronics
Robotics
Enterprise Storage
Automotive
Aerospace and Defense
Others

Breakup by Region:

North America: (United States, Canada)
Asia Pacific: (China, Japan, India, South Korea, Australia, Indonesia, Others)
Europe: (Germany, France, United Kingdom, Italy, Spain, Russia, Others)
Latin America: (Brazil, Mexico, Others)
Middle East and Africa

Who are the Major Magneto Resistive RAM (MRAM) Key players?

Avalanche Technology Inc., Crocus Nano Electronics LLC, Everspin Technologies Inc., Honeywell International Inc., Infineon Technologies AG, Intel Corporation, NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co. Ltd., Spin Memory Inc., Toshiba Corporation and Tower Semiconductor Ltd.

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