SiC Power Market Growth And Global Industry Analysis Upto 2030

Today, the most widely used material for power semiconductors is silicon. Silicon is inexpensive to produce and the technology is well understood. However, there are other materials, the so called compound power semiconductors, such as Silicon Carbide and gallium-nitride that are much more efficient conductors of electricity. This means that less energy is lost through heat in any power conversion process which has the added benefit of reducing the need to have expensive cooling systems as well as lowering the size and weight of the power electronics unit. Silicon Carbide combines silicon (Si) and carbon (C) having unique electrical characteristics that allow to build high performance semiconductors for various applications.

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SiC power devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity. ROHM is at the forefront in the development of SiC power devices and modules that offer improved power-savings in applications across a number of industries.

A Silicon Carbide power module is a power module that uses a Silicon Carbide semiconductor as switches. A Silicon Carbide power module is used to transform electrical power, which is the product of current and voltage with high conversion efficiency. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

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SiC Power: Introduction

1. SiC (Silicon Carbide) is a semiconductor material made up of a combination of silicon and carbon.
2. SiC has several characteristics such as higher breakdown electric field strength, lower thermal expansion, wider band gap, and high resistance to a chemical reaction.
3. SiC power finds extensive application in power grid devices, flexible AC transmission systems, high-voltage, direct current systems, power supplies and inverters, RF devices & cellular base stations, lighting control systems, electronic combat systems, EV motors, wind turbines, solar power systems, and others

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Rise in Demand for 4 Inch Wafer Size

1. The 4 inch wafer size segment is likely to be the fastest growing segment and hold dominant share of the global SiC power market during the forecast period.
2. 4 inch silicon carbide wafers are used in various devices such as optoelectronics devices, high power devices, high-temperature devices, and high-frequency power devices, which boosts the demand for 4 inch wafer size in the market.
3. The EV motors application segment holds second largest share of the global SiC power market due to the increasing use of silicon carbide-based semiconductor device implementation in industrial and commercial motor drives, electro-mechanical computing systems, and high-temperature sensors.
4. In February 2020, Infineon Technologies AG launched CoolSiC MOSFETs with 650 V. The company aims to meet the growing demand for energy efficiency, power density, and robustness in a wide range of applications.
5. In January 2020, STMicroelectronics signed a contract with SiCrystal, a ROHM Group company. Under this contract, the company has to supply SiC wafers to SiCrystal.
6. Some of the restraints of the SiC power market are a decrease in demand from end-users, shortage of raw materials, and disruptions in the supply chain due to COVID-19.

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