IGBT Market Size is Projected to Reach USD 26040 Million by 2028 at CAGR 15.5% - Valuates Reports

The global IGBT market size is projected to reach US$ 26040 million by 2028, from US$ 9389.6 million in 2021, at a CAGR of 15.5% during 2022-2028. Japan is the largest IGBT market with a market share of about 40%, followed by Europe with a market share of about 30%.

IGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power.

The global IGBT market is dominated by Infineon Technologies, Mitsubishi Electric Corporation, Fuji Electric, ON Semiconductor, Semikron, etc. The top five manufacturers account for about 55% market share.

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With industry-standard accuracy in analysis and high data integrity, the report makes a brilliant attempt to unveil key opportunities available in the global IGBT market to help players in achieving a strong market position. Buyers of the report can access verified and reliable market forecasts, including those for the overall size of the global IGBT market in terms of revenue.

Overall, the report proves to be an effective tool that players can use to gain a competitive edge over their competitors and ensure lasting success in the global IGBT market. All of the findings, data, and information provided in the report are validated and revalidated with the help of trustworthy sources. The analysts who have authored the report took a unique and industry-best research and analysis approach for an in-depth study of the global IGBT market.

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IGBT market is segmented by players, region (country), by Type and by Application. Players, stakeholders, and other participants in the global IGBT market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by Type and by Application for the period 2017-2028.

Segment by Type
➣IGBT Discretes
➣IGBT Modules
➣IGBT-IPM

Segment by Application
➣New-Energy Vehicles
➣Consumer Electronics
➣New Energy Power Generation
➣Industrial Control
➣Rail Transportation
➣Others

BY COMPANY
➣Infineon Technologies
➣Mitsubishi Electric
➣Fuji Electric
➣ON Semiconductor
➣SEMIKRON
➣Hitachi
➣Danfoss
➣Renesas Electronics
➣Toshiba
➣ABB
➣Littelfuse (IXYS)

By Regional and Country-level Analysis
➣North America
➣United States
➣Canada
➣Asia-Pacific
➣China
➣Japan
➣South Korea
➣India
➣Southeast Asia
➣Australia
➣Rest of Asia-Pacific
➣Europe
➣Germany
➣France
➣U.K.
➣Italy
➣Russia
➣Nordic Countries
➣Rest of Europe
➣Latin America
➣Mexico
➣Brazil
➣Rest of Latin America
➣Middle East & Africa
➣Turkey
➣Saudi Arabia
➣UAE
➣Rest of MEA

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