Press release
Insulated Gate Bipolar Transistor Market Overview By Size, Share, Trends, Growth Factors, Historical Analysis, Opportunities and Industry Segments Poised for Rapid Growth by 2028
The report on the insulated gate bipolar transistor market presents a detailed analysis of the market primarily focusing on growth trajectories such as drivers, restraints, challenges, and opportunities. It lists the segments of the market in detail and the names of market players as well. The key industrial insights and major strategies adopted by players such as merger and acquisition, company collaborations, and others are also presented in the market, along with other insulated gate bipolar transistor market trends.
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List of Key Players Covered in this Market Report
• Danfoss Group
• Fuji Electric Co., Ltd.
• Mitsubishi Electric Corporation
• Infineon Technologies AG
• Hitachi, Ltd.
• Toshiba Corporation
• ABB Ltd.
• Littelfuse, Inc. (IXYS).
• Rohm Co., Ltd.
• Starpower
Key Advantages of Insulated Gate Bipolar Transistor (IGBT) Market Report:
• Identification and analysis of the market size and competition
• Qualitative and quantitative analysis of the market data
• Data validated by industry experts after extensive primary and secondary research
• Extensive regional analysis of the Insulated Gate Bipolar Transistor (IGBT) Market industry
• Profiling of key players along with their business overview, business strategies, deals and partnerships, and product portfolio
• SWOT and Porter’s Five Forces Analysis for in-depth understanding of the competitive landscape
• Feasibility analysis and investment analysis to enable strategic investment decisions
• Analysis of opportunities, drivers, restraints, challenges, risks, and limitations
Conclusively, all aspects of the Insulated Gate Bipolar Transistor (IGBT) Market are quantitatively as well qualitatively assessed to study the global as well as regional market comparatively. This market study presents critical information and factual data about the market providing an overall statistical study of this market on the basis of market drivers, limitations and its future prospects.
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Rising Demand from Automobile Industry to Promote Market Growth
The increasing demand for alternative current (AC) in driving engines these days is a major factor promoting the overall IGBT device market growth in the forecast period. Additionally, the rise in popularity of electric vehicles and increasing investments on the same are also expected to help accelerate the overall IGBT module market size in the forthcoming years. Besides this, the surge in fuel prices is also increasing the demand for electric vehicles is creating lucrative growth opportunities from the automotive sector, and is further expected to help generate high IGBT module market revenue in the coming years. Furthermore, the advancement in technology and the advent of artificial intelligence and the Internet of Things will further help augment the overall IGBT module market growth in the coming years.
COVID-19 Pandemic: Supply Chain Break and Raw Material Unobtainability to Obstruct Market Growth
The COVID-19 pandemic has had a great influence on numerous industries and the mining equipment industry also had a principal collapse. The demand for these machines observed a substantial drop owing to the supply chain commotions.
Moreover, even mining equipment producers observed the absence of raw materials owing to the import-export and travel limitations resulting in terminations or delays in mining assignments
To get to know more about the short-term and long-term impact of COVID-19 on this market, please visit: https://www.fortunebusinessinsights.com/industry-reports/igbt-module-market-100501
China and its Rapid Adoption of Electric Vehicles Will Help Asia Pacific Emerge as Fastest Growing Region
Geographically, the global insulated gate bipolar transistor market is categorized into five major regions namely Europe, Asia Pacific, Latin America, North America, and the Middle East and Africa. Among these, North America is holding a dominant insulated gate bipolar transistor market share. This region earned a value of USD 1.85 billion in 2018 on account of the increasing awareness about renewable resources and its implementation in various industries worldwide. On the other side, Asia Pacific market is anticipated to emerge as the fastest-growing region on account of the rapid pace of electric vehicle adoption by China. Additionally, government initiatives are also helping in the promotion of electric vehicles. This is further anticipated to help increase the regional insulated gate bipolar transistor market size in the coming years.
Company Collaborations and Research and Development Activities to Bode Well for Market
Currently, a handful of companies are collectively contributing about 46% of the IGBT module market share. These companies include Fuji Electric Co. Ltd., Hitachi, ABB Ltd., Infineon Technologies AG, and Mitsubishi Electric Corporation. Furthermore, intense research and development, company collaborations, and research and development strategies adopted by players, are further prognosticated to help attract high IGBT device market revenue in the coming years.
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Some of the key industry developments in the IGBT module market include:
January 2018 – The development of a power semiconductor module 6.5 kV full silicon carbide (SiC) was announced by Mitsubishi Electric Corporation. This module guarantees to offer the highest power density and provide electric power systems and railcars with more compact and energy-efficient power.
September 2019 – The addition of four new automotive-grade 1200V-rated IGBT devices were announced by ROHM that are ideal for switching circuits in PTC (positive temperature coefficient) heaters or for inverters used in electronic compressors. This new RGS series will represent a large lineup of AEC-Q101- compliant IGBTs for both 650v-rated and 1200V-rated variants.
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Table of Contents:
• Introduction
• Definition, By Segment
• Research Methodology/Approach
• Data Sources
• Key Takeaways
• Market Dynamics
• Macro and Micro Economic Indicators
• Drivers, Restraints, Opportunities and Trends
• Impact of COVID-19
o Short-term Impact
o Long-term Impact
• Competition Landscape
• Business Strategies Adopted by Key Players
• Consolidated SWOT Analysis of Key Players
• Global Insulated Gate Bipolar Transistor Key Players Market Share Insights and Analysis, 2020
• Key Market Insights and Strategic Recommendations
• Companies Profiled (Covered for key 10 players only)
• Overview
o Key Management
o Headquarters etc.
• Offerings/Business Segments
• Key Details (Subjected to data availability in public domain and/or on paid databases)
o Employee Size
o Key Financials
Past and Current Revenue
Geographical Share
Business Segment Share
• Recent Developments
• Annexure / Appendix
• Global Insulated Gate Bipolar Transistor Market Size Estimates and Forecasts (Quantitative Data), By Segments, 2017-2028
o By Voltage (Value)
Low Voltage
• Up to 600 V
• 601 - 1200 V
Medium Voltage
• 1700 V
• 2500 V
High Voltage
• 3300 V
• 4500 V & above
o By Application (Value)
Consumer Electronics
Industrial Manufacturing
Automotive (EV/HEV)
Inverters/UPS
Railways
Renewables
Others
o By Region (Value)
North America
Europe
Middle East & Africa
Asia Pacific
Latin America
• North America Insulated Gate Bipolar Transistor Market Size Estimates and Forecasts (Quantitative Data), By Segments, 2017-2028
o By Voltage (Value)
Low Voltage
• Up to 600 V
• 601 - 1200 V
Medium Voltage
• 1700 V
• 2500 V
High Voltage
• 3300 V
• 4500 V & above
o By Application (Value)
Consumer Electronics
Industrial Manufacturing
Automotive (EV/HEV)
Inverters/UPS
Railways
Renewables
Others
o By Country (Value)
United States
Canada
TOC Continued.!
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