Press release
Insulated-Gate Bipolar Transistor (IGBT) Market Size, Share, Trends & Analysis to 2028
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.With the increasing number of wind farms, worldwide, along with high investments from the governments, the IGBT market is expected to grow multi-fold.
The Insulated-Gate Bipolar Transistor (IGBT) market was valued at xx Million US$ in 2020 and is projected to reach xx Million US$ by 2028, at a CAGR of xx% during the forecast period. In this study, 2020 has been considered as the base year and 2021 to 2028 as the forecast period to estimate the market size for Insulated-Gate Bipolar Transistor (IGBT).
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This report presents the worldwide Insulated-Gate Bipolar Transistor (IGBT) market size (value, production and consumption), splits the breakdown (data status 2017-2020 and forecast to 2028), by manufacturers, region, type and application.
This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.
The following manufacturers are covered in this report:
Renesas Electronics
Infineon Technologies
Fuji Electric
ROHM
SEMIKRON
Mitsubishi Electric
Toshiba
Hitachi
ON Semiconductor
ABB
Danfoss
Insulated-Gate Bipolar Transistor (IGBT) Breakdown Data by Type
Discrete IGBT
Modular IGBT
Insulated-Gate Bipolar Transistor (IGBT) Breakdown Data by Application
EV/HEV
Renewables
UPS
Rail
Motor Drives
Industrial
Commercial
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Insulated-Gate Bipolar Transistor (IGBT) Production by Region
United States
Europe
China
Japan
South Korea
Other Regions
Insulated-Gate Bipolar Transistor (IGBT) Consumption by Region
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Malaysia
Philippines
Thailand
Vietnam
Europe
Germany
France
UK
Italy
Russia
Rest of Europe
Central & South America
Brazil
Rest of South America
Middle East & Africa
GCC Countries
Turkey
Egypt
South Africa
Rest of Middle East & Africa
The study objectives are:
To analyze and research the global Insulated-Gate Bipolar Transistor (IGBT) status and future forecast involving, production, revenue, consumption, historical and forecast.
To present the key Insulated-Gate Bipolar Transistor (IGBT) manufacturers, production, revenue, market share, and recent development.
To split the breakdown data by regions, type, manufacturers and applications.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions.
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
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In this study, the years considered to estimate the market size of Insulated-Gate Bipolar Transistor (IGBT) :
History Year: 2017 - 2020
Base Year: 2020
Estimated Year: 2020
Forecast Year: 2021 – 2028
This report includes the estimation of market size for value (million USD) and volume (K Units). Both top-down and bottom-up approaches have been used to estimate and validate the market size of Insulated-Gate Bipolar Transistor (IGBT) market, to estimate the size of various other dependent submarkets in the overall market. Key players in the market have been identified through secondary research, and their market shares have been determined through primary and secondary research.
All percentage shares, splits, and breakdowns have been determined using secondary sources and verified primary sources.
For the data information by region, company, type and application, 2020 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
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