High Bandwidth Memory Market 2021 Strategic Assessment- Micron Technology Inc., Samsung Electronics Co. Ltd, SK Hynix Inc., IBM Corporation

The report presents an in-depth assessment of the High Bandwidth Memory Market including enabling technologies, key trends, market drivers, challenges, regulatory landscape, deployment models, opportunities, future roadmap, value chain, ecosystem player profiles and strategies. The report also presents forecasts for High Bandwidth Memory investments from 2021 till 2025.

The high bandwidth memory market is expected to register a CAGR of 33.5% during the forecast period (2020-2025). 

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The report presents the market competitive landscape and a corresponding detailed analysis of the major vendor/key players in the market. Top Companies in the Global High Bandwidth Memory Market: Micron Technology Inc., Samsung Electronics Co. Ltd, SK Hynix Inc., IBM Corporation, Advanced Micro Devices, Intel Corporation, Xilinx Inc., Fujitsu Ltd, Nvidia Corporation, Open-Silicon, Arira Design Inc., Cadence Design Systems, Marvell Technology Group, Cray Inc., Rambus, Arm Holdings

Key Developments:

- November 2019 - HPE's Cray announced that it would be co-developing Fujitsu's A64FX CPU to meet the requirements of likely customers such as universities and national research laboratories. As part of this new partnership, Cray and Fujitsu will explore engineering collaboration, co-development, and joint go-to-market to meet customer demand in the supercomputing space.
- March 2019 - Samsung announced its Flashbolt HBM2E, featuring eight dies per stack, a transfer rate of 3.2 GT/s, providing a total of 16 GB and 410 GB/s per stack.

Market Overview:

Major factors driving the growth of the high bandwidth memory (HBM) market include growing need for high-bandwidth, low power consumption, and highly scalable memories, increasing adoption of artificial intelligence, and a rising trend of miniaturization of electronic devices.
- With the growing application of graphics, the appetite for the fast delivery of information (bandwidth) has also increased. Therefore HBM memory performs better than a GDDR5, which was used earlier in terms of performance and power efficiency, resulting in growth opportunities for the high bandwidth memory market.
- For instance, AMD provides high bandwidth memory that uses vertically stacked memory chips interconnected by microscopic wires called through-silicon vias or TSVs. These break the processing bottleneck due to its benefits, such as 94% less space compared to GDDR5, lower power consumption, lightweight, and higher performance in terms of processing speed. The above factors increase their industry-wide applications.

Regional Analysis:

For comprehensive understanding of market dynamics, the global High Bandwidth Memory Market is analyzed across key geographies namely: United States, China, Europe, Japan, South-east Asia, India and others. Each of these regions is analyzed on basis of market findings across major countries in these regions for a macro-level understanding of the market.

Key Market Trends
Accelerated Processing Units to Have the Largest Growth
- APUs integrate both GPU and CPU capabilities on a single SoC. This improves the overall energy efficiency of the APUs by eliminating connections between chips as well as the processing speed due to the improved data transfer rate, and thus, boosts the growth of the market due to increased applicability in various industries.
- AMD (US), the leading manufacturer of APUs, demonstrated an APU with integrated HBM and stacked non-volatile memory cells. This will also serve to drive the adoption of APUs in computing applications.
- The wide application of high bandwidth memory technology in supercomputers, robotics, and gaming open significant opportunities for the industry in many developed as well as emerging economies. For instance, NVIDIA powers US-based Summit, the worlds fastest supercomputer, as well as the fastest systems in Europe and Japan. More than 130 supercomputers on the TOP500 list are accelerated by NVIDIA, including five of the top 10.
- However, thermal issues caused by the high level of integration and high initial cost are the key restraining factor for market growth.

The report has 150 tables and figures browse the report description and TOC:

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What are the market factors that are explained in the report?

-Key Strategic Developments: The study also includes the key strategic developments of the market, comprising R&D, new product launch, M&A, agreements, collaborations, partnerships, joint ventures, and regional growth of the leading competitors operating in the market on a global and regional scale.

-Key Market Features: The report evaluated key market features, including revenue, price, capacity, capacity utilization rate, gross, production, production rate, consumption, import/export, supply/demand, cost, market share, CAGR, and gross margin. In addition, the study offers a comprehensive study of the key market dynamics and their latest trends, along with pertinent market segments and sub-segments.

-Analytical Tools: The Global High Bandwidth Memory Market report includes the accurately studied and assessed data of the key industry players and their scope in the market by means of a number of analytical tools. The analytical tools such as Porter’s five forces analysis, feasibility study, and investment return analysis have been used to analyze the growth of the key players operating in the market.

Finally, High Bandwidth Memory Market report is the believable source for gaining the Market research that will exponentially accelerate your business. The report gives the economic situations with the item value, benefit, limit, generation, supply, request and Market development rate and figure and so on. This report additionally Present new task SWOT examination, speculation attainability investigation, and venture return investigation.

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