Silicon Carbide Power Semiconductors Market 2021 Global Industry Size, Share, Historical Analysis, Opportunity Assessment by Forecast 2025

Silicon Carbide Power Semiconductors Market by Power Module (Power Product and Discrete Product) and Industry Vertical (IT & Telecom, Aerospace & Defense, Industrial, Energy & Power, Electronics, and Automotive & Healthcare): Global Opportunity Analysis and Industry Forecast, 2018-2025. The report offers insights on key investment pockets, top player positioning, drivers & opportunities, major segments, and developments in the industry. As per the report, the global silicon carbide power semiconductors market garnered $302 million in 2017, and is expected to reach $1,109 million by 2025, growing at a CAGR of 18.1% from 2018 to 2025.

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Rise in demand for power electronics across various industry verticals including medical, defense, aerospace, and others along with SiC-based photovoltaic cells in emerging economies such as Brazil, China, and India are expected to drive growth in the industry. Moreover, establishment of 5G infrastructure would supplement the growth. On the other hand, huge initial cost and design challenges of SiC MOSFETs would restrain growth in the market. Increase in applications of SiC power devices due to their abilities to offer high efficiency, high voltage, and high temperature operation would create new pathways in the industry.

Allied Market Research recently published a report titled, “Silicon Carbide Power Semiconductors Market: Global Opportunity Analysis and Industry Forecast 2020-2027’’.The market report presents the top factors and market trends that are real behind the growth of the market. It also offers an extensive study of evolving market dynamics, top investment pockets, key sections, competitive scenarios, value chain, and major investment prospects. These figures and data are helpful for startups, stakeholders, investors, and the key market players to obtain useful understandings and visions on the market and implement necessary strategies based on the same.

Silicon Carbide Power Semiconductors Market Competitive Analysis:

Key market players analyzed in the research include Infineon Technologies AG, General Electric, Microsemi Corporation, Toshiba Corporation, Power Integrations, STMicroelectronics, Fairchild Semiconductor, Tokyo Electron Limited, NXP Semiconductors, ROHM, Renesas Electronics Corporation, and Cree, Inc. New product launches, expansions, joint ventures, collaborations, partnerships, mergers & acquisitions, and others are some of the strategies adopted by them to achieve a leadership status in the industry.

Covid-19 Impact on the Global Silicon Carbide Power Semiconductors Market:

Silicon Carbide Power Semiconductors Market Research Report offers an outline of the market based on basic parameters such as market size, sales analysis, and key drivers. The market is expected to expand on a large scale during the forecast period (2021-2024). This report includes COVID-19 impacts on the market. The unprecedented arrival of the coronavirus pandemic (COVID-19) has troubled the complete lifestyles. This in turn has affected some of the market situations along with introducing new norms. The broad view of the research report, therefore, provides the users with the total impacts of covid19 on the industry and the market players.

COVID-19 Scenario:

Due to the global pandemic all over the world, the medical devices manufacturers are majorly focusing on research and development of new products.
However, due to the precautionary measures taken by governments in various regions, the supply chain has been hampered. Which may result in shortage of products in certain locations.

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Silicon Carbide Power Semiconductors Market Segmentation:

The report provides segmentation of the global Silicon Carbide Power Semiconductors Market. The major segments in the report are studied on the basis of product, type, end user, and regions. Along with this, it also involves the tables based on extensive analysis of sales, revenue, growth rate, and revenue share of each for the historic as well as forecast period.

Silicon Carbide Power Semiconductors Market Geographical Analysis:

The report also provides a regional analysis of the market along with the competitive setting in each region. The research report encompasses regions including North America (the United States, Canada, and Mexico), Europe (Germany, France, UK, Russia, and Italy), Asia-Pacific (China, Japan, Korea, India, and Southeast Asia), South America (Brazil, Argentina, and Colombia), Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, and South Africa). These segmentations aid the market players in framing respective tactics, thus leading way to lucrative opportunities to attain their objectives.

Asia-Pacific is the lucrative region, contributing to nearly half of total market share in 2017, and expected to further strengthen its dominance by 2025, registering the fastest CAGR of 19.0% during the forecast period. Factors responsible for the fastest growth rate are rise in number of silicon carbide suppliers and increase in demand of power electronics in emerging economies including China, Japan, and South Korea. Other regions analyzed in the report include North America, Europe, and Latin America, Middle East and Africa (LAMEA).

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Silicon Carbide Power Semiconductors Market Key

Segments:

By Power Module

Power product
Discrete product

By Industry Vertical

IT & telecom
Aerospace & defense
Industrial
Energy & power
Electronics
Automotive
Healthcare

By Region

North America
U.S.
Canada
Mexico
Europe
UK
Germany
France
Italy
Rest of Europe
Asia-Pacific
China
India
Japan
Australia
South Korea
Rest of Asia-Pacific
LAMEA
Brazil
Saudi Arabia
South Africa
Rest of LAMEA

CHAPTER 1: INTRODUCTION

1.1. REPORT DESCRIPTION
1.2. KEY BENEFITS FOR STAKEHOLDERS
1.3. KEY MARKET SEGMENTS
1.4. RESEARCH METHODOLOGY

1.4.1. Primary research
1.4.2. Secondary research
1.4.3. Analyst tools and models

CHAPTER 2: EXECUTIVE SUMMARY

2.1. CXO PERSPECTIVE

CHAPTER 3: MARKET OVERVIEW

3.1. MARKET DEFINITION AND SCOPE
3.2. KEY FINDINGS

3.2.1. Top impacting factors
3.2.2. Top investment pockets
3.2.3. Top winning strategies

3.3. PORTER’S FIVE FORCES ANALYSIS

3.3.1. Moderate to high bargaining power of suppliers
3.3.2. Moderate threat of new entrants
3.3.3. Moderate threat of substitutes
3.3.4. Moderate to high intensity of rivalry
3.3.5. Moderate to high bargaining power of buyers

3.4. KEY PLAYER POSITIONING, 2017 (%)
3.5. MARKET DYNAMICS

3.5.1. Drivers

3.5.1.1. Advantages of compound semiconductors (SiC) over silicon-based technology.
3.5.1.2. Increase in demand of power electronics modules across various industry verticals.
3.5.1.3. Rise in installation of solar photovoltaic panels for electricity generation.
3.5.1.4. Growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles .

3.5.2. Restraints

3.5.2.1. High wafer cost of silicon carbide semiconductors.
3.5.2.2. Complexity in supply chain and designing process of SiC semiconductor technology.

3.5.3. Opportunities

3.5.3.1. Advent of 5G mobile communication.

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